US 6,771,538 B2 · Semiconductor integrated circuit and nonvolatile memory element

Abstract

Owing to the above, even with the single-layer gate process such as single-layer polysilicon gate process, it is possible to obtain a semiconductor integrated circuit such as system LSI in which a nonvolatile memory which is excellent in data retention capability is merged and packaged with a DRAM etc. Further, since the nonvolatile memory of high reliability can be formed without adding any step to a related art manufacturing process, such as a standard CMOS manufacturing process, the present invention may be readily applied to an LSI in which the nonvolatile memory and a logic LSI, or the nonvolatile memory and a DRAM are merged and packaged on an identical semiconductor substrate. Accordingly, a system LSI in which a flash memory is merged and packaged can be provided without increasing the cost of manufacture.

Claims10

Dependent claims

A semiconductor integrated circuit device on a semiconductor substrate, comprising:

an internal circuit which includes P-channel MIS transistors and N-channel MIS transistors, each of which has a gate electrode of a first level polycrystalline silicon layer;
an electrically programmable and erasable non-volatile memory which includes a plurality of memory cells, each memory cell including a floating gate of the first level polycrystalline silicon layer and a control gate of a semiconductor region in the semiconductor substrate;
and
a volatile memory coupled to receive data stored in the electrically programmable and erasable non-volatile memory.

1 more element

Dependencies are inferred from the claim text.

Semiconductor integrated circuit and nonvolatile memory element

Life of this patent

Semiconductor integrated circuit and nonvolatile memory element

Life of this patent

Abstract

Claims10