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US 7,129,538 B2Granted
Dense arrays and charge storage devices
AssigneeSanDisk 3D LLC
InventorsThomas H. Lee, Vivek Subramanian, James M. Cleeves, Andrew J. Walker, Christopher Petti, Igor G. Kouznetzov, Mark G. Johnson, Paul M. Farmwald, Brad Herner
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Abstract
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
Claims20
A three dimensional nonvolatile device array, comprising:
- a plurality of vertically separated device levels, each level comprising an array of TFT EEPROMs, each TFT EEPROM comprising a channel, source and drain regions, and a charge storage region adjacent to the channel region;
- a plurality of bit line columns in each device level, each bit line column contacting the source or the drain regions of the TFT EEPROMs;
- a plurality of word line rows in each device level;
- and
- at least one interlevel insulating layer located between the device levels;
- wherein the plurality of vertically separated device levels comprise a monolithic plurality of vertically separated device levels.
3 more elements
Dependencies are inferred from the claim text.