H10B 41/70
The floating gate being an electrode shared by two or more components
Official title: the floating gate being an electrode shared by two or more components
H10B41/70 (The floating gate being an electrode shared by two or more components) appears on 643 US grants and 838 published applications in this corpus.
Search patents in H10B- Granted patents
- 643
- Published applications
- 838
- Assignees
- 56
- Inventors
- 509
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 2 | 1 |
| 2011 | 0 | 54 |
| 2012 | 6 | 69 |
| 2013 | 51 | 53 |
| 2014 | 66 | 49 |
| 2015 | 64 | 72 |
| 2016 | 68 | 57 |
| 2017 | 67 | 34 |
| 2018 | 37 | 22 |
| 2019 | 32 | 19 |
| 2020 | 18 | 51 |
| 2021 | 36 | 49 |
| 2022 | 32 | 75 |
| 2023 | 24 | 49 |
| 2024 | 60 | 46 |
| 2025 | 53 | 80 |
| 2026 | 21 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Semiconductor device and manufacturing method thereof368US 9,780,225 B2Semiconductor Energy Laboratory Co.Ltd. · 2017
- Semiconductor device132US 8,455,868 B2Semiconductor Energy Laboratory Co.Ltd. · 2013
- Oxide-based thin-film transistor (TFT) semiconductor memory device having source/drain electrode of one transistor connected to gate electrode of the other119US 8,860,108 B2Semiconductor Energy Laboratory Co.Ltd. · 2014
- Semiconductor device79US 8,378,403 B2Semiconductor Energy Laboratory Co.Ltd. · 2013
- Non-volatile latch circuit and logic circuit, and semiconductor device using the same72US 8,314,637 B2Semiconductor Energy Laboratory Co.Ltd. · 2012