Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Kiyoshi Kato
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Abstract
An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.
Claims16
A semiconductor device comprising:
- a first transistor comprising:
- a first channel formation region comprising a semiconductor material other than an oxide semiconductor;
- a pair of impurity regions provided so as to sandwich the first channel formation region;
- a first gate insulating layer over the first channel formation region;
- a first gate electrode over the first gate insulating layer;
- and
- a first source electrode electrically connected to one of the pair of impurity regions and a first drain electrode electrically connected to the other one of the pair of impurity regions;
- an interlayer insulating film over the first transistor,
- a second transistor over the interlayer insulating film, comprising:
- a second source electrode and a second drain electrode;
- a second channel formation region comprising an oxide semiconductor material, and electrically connected to the second source electrode and the second drain electrode;
- a second gate insulating layer over the second channel formation region;
- and
- a second gate electrode over the second gate insulating layer;
- and
- a capacitor over the interlayer insulating film, comprising:
- one of the second source electrode and the second drain electrode;
- the second gate insulating layer;
- and
- a capacitor electrode over the second gate insulating layer.
A semiconductor device comprising:
- a first transistor comprising:
- a first channel formation region comprising a semiconductor material other than an oxide semiconductor;
- a pair of impurity regions provided so as to sandwich the first channel formation region;
- a first gate insulating layer over the first channel formation region;
- a first gate electrode over the first gate insulating layer;
- and
- a first source electrode electrically connected to one of the pair of impurity regions and a first drain electrode electrically connected to the other one of the pair of impurity regions;
- an interlayer insulating film over the first transistor,
- a second transistor over the interlayer insulating film, comprising:
- a second source electrode and a second drain electrode;
- a second channel formation region comprising an oxide semiconductor material, and electrically connected to the second source electrode and the second drain electrode;
- a second gate insulating layer over the second channel formation region;
- and
- a second gate electrode over the second gate insulating layer;
- and
- a capacitor over the interlayer insulating film, comprising:
- one of the second source electrode and the second drain electrode;
- the second gate insulating layer;
- and
- a capacitor electrode over the second gate insulating layer,
- wherein edge portions of the second source electrode and the second drain electrode are tapered.
Dependencies are inferred from the claim text.