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US 2026/0255604 A1Published application
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHitoshi KUNITAKE, Yuki ITO, Shunpei YAMAZAKI
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Abstract
A novel semiconductor device is provided. The semiconductor device includes an oxide semiconductor as a first semiconductor, silicon as a second semiconductor, and a plurality of memory cells lined up in a first direction; and a memory cell includes a writing transistor and a reading transistor. The first semiconductor and the second semiconductor extend in the first direction, part of the first semiconductor functions as a channel formation region of the writing transistor, and part of the second semiconductor functions as a channel formation region of the reading transistor. The second semiconductor includes a region in contact with a first layer containing a first metal element.
Claims13
A semiconductor device comprising:
- a structural body extending in a first direction;
- a plurality of first conductors extending in a second direction that intersects with the first direction;
- and
- a plurality of second conductors extending in the second direction,
- wherein the structural body comprises:
- a third conductor;
- a first insulator;
- a plurality of fourth conductors;
- a first semiconductor;
- a second insulator;
- a second semiconductor;
- and
- a third insulator,
- wherein, in a first region corresponding to each intersecting portion of the plurality of first conductors and the structural body, the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator are arranged concentrically in that order around the third conductor,
- wherein, in the first region, a first portion of one of the plurality of first conductors is configured to function as a first gate electrode of a first transistor, a first portion of the first semiconductor is configured to function as a first channel formation region of the first transistor, and a first portion of the third conductor is configured to function as a second gate electrode of the first transistor,
- wherein, in a second region corresponding to each intersecting portion of the plurality of second conductors and the structural body, the first insulator, one of the plurality of fourth conductors, the first semiconductor, the second insulator, the second semiconductor, and the third insulator are arranged concentrically in that order around the third conductor and the one of the plurality of fourth conductors is in contact with the first semiconductor,
- wherein, in the second region, a first portion of one of the plurality of second conductors is configured to function as a first gate electrode of a second transistor, a first portion of the second semiconductor is configured to function as a second channel formation region of the second transistor, and a first portion of the one of the plurality of fourth conductors is configured to function as a second gate electrode of the second transistor,
- wherein the first semiconductor comprises an oxide semiconductor,
- wherein the second semiconductor comprises polycrystalline silicon,
- wherein the second semiconductor comprises a region in contact with a first layer, and
- wherein the first layer comprises a first metal element.
18 more elements
A semiconductor device comprising:
- a structural body;
- a plurality of first conductors;
- and
- a plurality of second conductors,
- wherein the structural body comprises:
- a third conductor;
- a first insulator;
- a plurality of fourth conductors;
- a first semiconductor;
- a second insulator;
- a second semiconductor;
- and
- a third insulator,
- wherein, in a first region corresponding to each intersecting portion of the plurality of first conductors and the structural body, the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator are arranged concentrically in that order around the third conductor, and
- wherein, in the first region, a first portion of one of the plurality of first conductors is configured to function as a first gate electrode of a first transistor, a first portion of the first semiconductor is configured to function as a first channel formation region of the first transistor, and a first portion of the third conductor is configured to function as a second gate electrode of the first transistor.
12 more elements
A semiconductor device comprising:
- a first conductor;
- a second conductor;
- and
- a structural body, the structural body comprising:
- a third conductor;
- a first insulator;
- a fourth conductor;
- an oxide semiconductor;
- a second insulator;
- a first semiconductor comprising silicon;
- and
- a third insulator,
- wherein the first insulator, the oxide semiconductor, the second insulator, the first semiconductor, and the third insulator are arranged concentrically in that order around the third conductor,
- wherein a first portion of the first conductor is configured to function as a first gate electrode of a first transistor, a first portion of the oxide semiconductor is configured to function as a first channel formation region of the first transistor, and a first portion of the third conductor is configured to function as a second gate electrode of the first transistor,
- wherein the first insulator, the fourth conductor, the oxide semiconductor, the second insulator, the first semiconductor, and the third insulator are arranged concentrically in that order around the third conductor with the fourth conductor being in contact with the oxide semiconductor, and
- wherein a first portion of the second conductor is configured to function as a first gate electrode of a second transistor, a first portion of the first semiconductor is configured to function as a second channel formation region of the second transistor, and a first portion of the fourth conductor is configured to function as a second gate electrode of the second transistor.
13 more elements
Dependencies are inferred from the claim text.