H10B 41/30
Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the memory
Official title: characterised by the memory core region
H10B41/30 (Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by the memory) appears on 9,360 US grants and 10,367 published applications in this corpus.
Search patents in H10B- Granted patents
- 9,360
- Published applications
- 10,367
- Assignees
- 655
- Inventors
- 8,571
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 17 | 0 |
| 1992 | 16 | 0 |
| 1993 | 18 | 0 |
| 1994 | 33 | 0 |
| 1995 | 50 | 0 |
| 1996 | 52 | 0 |
| 1997 | 72 | 0 |
| 1998 | 81 | 0 |
| 1999 | 104 | 0 |
| 2000 | 158 | 0 |
| 2001 | 221 | 88 |
| 2002 | 195 | 200 |
| 2003 | 225 | 228 |
| 2004 | 280 | 330 |
| 2005 | 245 | 439 |
| 2006 | 284 | 515 |
| 2007 | 295 | 550 |
| 2008 | 321 | 577 |
| 2009 | 356 | 469 |
| 2010 | 462 | 367 |
| 2011 | 399 | 387 |
| 2012 | 317 | 321 |
| 2013 | 360 | 309 |
| 2014 | 323 | 336 |
| 2015 | 363 | 425 |
| 2016 | 423 | 407 |
| 2017 | 394 | 353 |
| 2018 | 313 | 290 |
| 2019 | 359 | 413 |
| 2020 | 436 | 523 |
| 2021 | 411 | 502 |
| 2022 | 367 | 510 |
| 2023 | 371 | 480 |
| 2024 | 371 | 533 |
| 2025 | 366 | 443 |
| 2026 | 273 | 372 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Address fault detection in a memory system6 Oct 2026US 12,755,788 B2Silicon Storage Technology, Inc.
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Memory array and method used in forming a memory array comprising strings of memory cells6 Oct 2026US 12,757,393 B2Micron Technology, Inc.
- Method of manufacturing memory device6 Oct 2026US 12,757,394 B2Winbond Electronics Corp.
- Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device6 Oct 2026US 12,757,396 B2Kioxia Corporation
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Floating data line circuit and method8 Oct 2026US 2026/0311771 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
- Semiconductor device with aligned channel structures and gate contact structures8 Oct 2026US 2026/0313896 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates827US 5,867,429 ASanDisk Corporation · 1999
- Dense vertical programmable read only memory cell structure and processes for making them542US 5,343,063 ASunDisk Corporation · 1994
- Semiconductor memory devices including an air gap and methods of fabricating the same480US 9,166,012 B2Samsung Electronics Co., Ltd. · 2015
- Air gap isolation in non-volatile memory using sacrificial films473US 9,123,577 B2SanDisk Technologies LLC · 2015
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014