H10B 41/20
Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by three-dimensional [3d]
Official title: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
H10B41/20 (Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates: characterised by three-dimensional [3d]) appears on 6,871 US grants and 8,948 published applications in this corpus.
Search patents in H10B- Granted patents
- 6,871
- Published applications
- 8,948
- Assignees
- 321
- Inventors
- 6,292
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 8 | 0 |
| 1996 | 6 | 0 |
| 1997 | 9 | 0 |
| 1998 | 9 | 0 |
| 1999 | 22 | 0 |
| 2000 | 16 | 0 |
| 2001 | 11 | 6 |
| 2002 | 16 | 22 |
| 2003 | 14 | 29 |
| 2004 | 27 | 39 |
| 2005 | 32 | 55 |
| 2006 | 43 | 48 |
| 2007 | 31 | 45 |
| 2008 | 31 | 53 |
| 2009 | 34 | 52 |
| 2010 | 47 | 75 |
| 2011 | 51 | 108 |
| 2012 | 78 | 129 |
| 2013 | 121 | 147 |
| 2014 | 165 | 234 |
| 2015 | 264 | 302 |
| 2016 | 336 | 324 |
| 2017 | 332 | 331 |
| 2018 | 290 | 308 |
| 2019 | 375 | 477 |
| 2020 | 551 | 764 |
| 2021 | 644 | 957 |
| 2022 | 656 | 1110 |
| 2023 | 672 | 947 |
| 2024 | 782 | 960 |
| 2025 | 704 | 747 |
| 2026 | 485 | 679 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- 3D semiconductor device and method of forming the same6 Oct 2026US 12,757,391 B2Tokyo Electron Limited
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Memory array and method used in forming a memory array comprising strings of memory cells6 Oct 2026US 12,757,393 B2Micron Technology, Inc.
- Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device6 Oct 2026US 12,757,396 B2Kioxia Corporation
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Floating data line circuit and method8 Oct 2026US 2026/0311771 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
- Three-dimensional memory device with overlapped staircases and methods for forming the same8 Oct 2026US 2026/0313893 A1SanDisk Technologies LLC
Most cited
By later US patents
- Vertical-type non-volatile memory devices657US 7,679,133 B2Samsung Electronics Co., Ltd. · 2010
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Semiconductor device and method of manufacturing the same473US 8,710,580 B2Kabushiki Kaisha Toshiba · 2014
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014