3D semiconductor device and method of forming the same
AssigneeTokyo Electron Limited
InventorsH. Jim Fulford, Mark I. Gardner, Partha Mukhopadhyay
Life of this patent
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Abstract
A semiconductor device includes a stack of layers, a vertical channel structure and vertical contact structures. The stack of layers defines a sidewall surface and includes terminal layers which include source, gate and drain layers. The vertical channel structure defines an inner axis that is substantially transverse to a main surface of the stack of layers. The vertical contact structures are each configured to electrically connect to a respective terminal layer. At least two vertical contact structures are in different radial positions relative to the inner axis.
Claims20
A semiconductor device, comprising:
- a stack of layers defining a sidewall surface, the stack of layers including terminal layers which include source, gate and drain layers;
- a vertical channel structure defining an inner axis that is substantially transverse to a main surface of the stack of layers, wherein the vertical channel structure includes a semiconductor shell surrounding a dielectric core;
- and
- vertical contact structures each configured to electrically connect to a respective terminal layer, wherein at least two vertical contact structures are in different radial positions relative to the inner axis.
A semiconductor device, comprising:
- a stack of layers defining a sidewall surface, the stack of layers including terminal layers which include source, gate and drain layers;
- a vertical channel structure defining an inner axis that is substantially transverse to a main surface of the stack of layers;
- vertical contact structures each configured to electrically connect to a respective terminal layer;
- and
- a landing pad structure extending from the stack of layers outward to the at least one vertical contact structure, the landing pad structure configured to electrically connect the at least one vertical contact structure to a respective terminal layer,
- wherein at least two vertical contact structures are in different radial positions relative to the inner axis,
- at least one vertical contact structure is positioned outside the stack of layers,
- the at least one vertical contact structure is partially positioned on the landing pad structure and partially bypasses the landing pad structure in a direction of the inner axis,
- at least two vertical contact structures have a same length in the direction of the inner axis, and
- the at least two respective landing pad structures are in different radial positions and different longitudinal positions relative to the inner axis.
Dependencies are inferred from the claim text.