H10B 41/23
With source and drain on different levels
Official title: with source and drain on different levels, e.g. with sloping channels
H10B41/23 (With source and drain on different levels) appears on 6,137 US grants and 8,036 published applications in this corpus.
Search patents in H10B- Granted patents
- 6,137
- Published applications
- 8,036
- Assignees
- 287
- Inventors
- 5,725
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 0 | 0 |
| 1995 | 8 | 0 |
| 1996 | 4 | 0 |
| 1997 | 6 | 0 |
| 1998 | 8 | 0 |
| 1999 | 15 | 0 |
| 2000 | 15 | 0 |
| 2001 | 9 | 2 |
| 2002 | 15 | 20 |
| 2003 | 11 | 27 |
| 2004 | 24 | 37 |
| 2005 | 28 | 41 |
| 2006 | 40 | 39 |
| 2007 | 27 | 35 |
| 2008 | 22 | 23 |
| 2009 | 25 | 28 |
| 2010 | 24 | 55 |
| 2011 | 30 | 69 |
| 2012 | 57 | 97 |
| 2013 | 86 | 119 |
| 2014 | 130 | 197 |
| 2015 | 215 | 257 |
| 2016 | 298 | 293 |
| 2017 | 294 | 297 |
| 2018 | 256 | 274 |
| 2019 | 350 | 431 |
| 2020 | 510 | 717 |
| 2021 | 596 | 886 |
| 2022 | 607 | 1028 |
| 2023 | 607 | 859 |
| 2024 | 714 | 887 |
| 2025 | 644 | 687 |
| 2026 | 455 | 631 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- 3D semiconductor device and method of forming the same6 Oct 2026US 12,757,391 B2Tokyo Electron Limited
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Memory array and method used in forming a memory array comprising strings of memory cells6 Oct 2026US 12,757,393 B2Micron Technology, Inc.
- Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device6 Oct 2026US 12,757,396 B2Kioxia Corporation
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
- Three-dimensional memory device with overlapped staircases and methods for forming the same8 Oct 2026US 2026/0313893 A1SanDisk Technologies LLC
- Semiconductor device with through electrode through mold structure8 Oct 2026US 2026/0313894 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Vertical-type non-volatile memory devices657US 7,679,133 B2Samsung Electronics Co., Ltd. · 2010
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Method of processing a substrate and a device manufactured by using the method455US 10,134,757 B2ASM IP Holding B. V. · 2018
- Technique to deposit sidewall passivation for high aspect ratio cylinder etch440US 9,997,373 B2Lam Research Corporation · 2018