H10B 20/00
Read-only memory [rom] devices
Official title: Read-only memory [ROM] devices
H10B20/00 (Read-only memory [rom] devices) appears on 2,937 US grants and 2,587 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,937
- Published applications
- 2,587
- Assignees
- 477
- Inventors
- 3,495
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 4 | 0 |
| 1978 | 10 | 0 |
| 1979 | 9 | 0 |
| 1980 | 21 | 0 |
| 1981 | 20 | 0 |
| 1982 | 15 | 0 |
| 1983 | 18 | 0 |
| 1984 | 11 | 0 |
| 1985 | 14 | 0 |
| 1986 | 14 | 0 |
| 1987 | 14 | 0 |
| 1988 | 9 | 0 |
| 1989 | 10 | 0 |
| 1990 | 20 | 0 |
| 1991 | 19 | 0 |
| 1992 | 15 | 0 |
| 1993 | 21 | 0 |
| 1994 | 35 | 0 |
| 1995 | 47 | 0 |
| 1996 | 55 | 0 |
| 1997 | 64 | 0 |
| 1998 | 72 | 0 |
| 1999 | 83 | 0 |
| 2000 | 64 | 0 |
| 2001 | 71 | 22 |
| 2002 | 57 | 55 |
| 2003 | 71 | 93 |
| 2004 | 81 | 84 |
| 2005 | 60 | 80 |
| 2006 | 67 | 76 |
| 2007 | 57 | 81 |
| 2008 | 38 | 102 |
| 2009 | 42 | 82 |
| 2010 | 106 | 81 |
| 2011 | 78 | 78 |
| 2012 | 67 | 75 |
| 2013 | 92 | 83 |
| 2014 | 93 | 81 |
| 2015 | 93 | 101 |
| 2016 | 110 | 105 |
| 2017 | 122 | 130 |
| 2018 | 125 | 115 |
| 2019 | 110 | 111 |
| 2020 | 90 | 104 |
| 2021 | 104 | 138 |
| 2022 | 96 | 139 |
| 2023 | 109 | 167 |
| 2024 | 108 | 150 |
| 2025 | 143 | 162 |
| 2026 | 73 | 92 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device structure including fuse structure embedded in substrate6 Oct 2026US 12,757,389 B2Nanya Technology Corporation
- Antifuses capable of forming localized conductive links6 Oct 2026US 12,757,390 B2Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and method of manufacturing the same22 Sep 2026US 12,744,097 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Non-volatile programmable logic device based on multi-chip package15 Sep 2026US 12,737,520 B2iCometrue Company Ltd.
- One time programming memory cell with gate-all-around transistor for physically unclonable function technology15 Sep 2026US 12,740,056 B2eMemory Technology Inc.
- 1.5T OTP Memory And Method For Preparing Same8 Oct 2026US 2026/0311784 A1Shanghai Huali Integrated Circuit Corporation
- One-time programmable memory devices with heater devices and methods for manufacturing and operating the same8 Oct 2026US 2026/0311785 A1Taiwan Semiconductor Manufacturing Company.Ltd
- 3d efuse with data poison8 Oct 2026US 2026/0311786 A1Advanced Micro Devices, Inc.
- Integrated circuit with back-side metal line8 Oct 2026US 2026/0313886 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit with hard-coded ic-specific code, device and method8 Oct 2026US 2026/0313887 A1Sandgrain B.V.
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Three-dimensional memory array and method of fabrication829US 6,420,215 B1Matrix Semiconductor, Inc. · 2002
- Three-dimensional read-only memory750US 5,835,396 A1998
- Vertically stacked field programmable nonvolatile memory and method of fabrication621US 6,185,122 B2Matrix Semiconductor, Inc. · 2001
- Memory cell arrangement with vertical MOS transistors and the production process thereof532US 6,180,979 B2Siemens Aktiengesellschaft · 2001