1.5T OTP Memory And Method For Preparing Same

Abstract

A 1.5T OTP memory and a method for preparing the same are provided; a program gate can be fabricated to an STI structure by only changing the morphology of a gate structure mask from a standard process mask without additional process steps, and both sides of each single program gate can be programmable separately, so as to achieve a higher density of 1.5T programming, and to increase the integration degree of the OTP memory, thereby realizing miniaturized high-density integration; in addition, anti-fuse structures of the OTP memory utilize electric fields between active areas and respective sides of the program gate, thereby improving the programming efficiency and stability; further, the anti-fuse function can be concentrated around the active area divots, making breakdown regions of the anti-fuses more convergent and controllable.

Dependencies are inferred from the claim text.