Semiconductor device structure including fuse structure embedded in substrate

A semiconductor device structure, comprising:

• a substrate, wherein the substrate has an opening formed from an upper surface of the substrate, wherein the opening of the substrate has an oval profile defining a curved lateral surface extended from the upper surface of the substrate and a bottom formed below the upper surface of the substrate;
• a fuse structure comprising a fuse electrode disposed within the substrate, wherein the fuse electrode is embedded from an upper surface of the substrate;
• and
• a first word line electrically coupled to the fuse structure, wherein the first word line is disposed within the substrate and spaced apart from the fuse electrode of the fuse structure, wherein the first word line is embedded from the upper surface of the substrate;
• wherein the fuse electrode is disposed within the opening of the substrate;
• wherein the fuse electrode has a lower surface at the bottom of the opening, and a lateral surface protruding toward the first word line and along the curved lateral surface of the opening;
• wherein the lower surface of the fuse electrode is parallel to the upper surface of the substrate;
• wherein the lateral surface of the fuse electrode is extended from the lower surface thereof to the upper surface of the substrate, such that the lateral surface of the fuse electrode is convex surface extended between the lower surface of the fuse electrode and the upper surface of the substrate;
• wherein the lower surface of the fuse electrode is a flat surface.