H10B 20/20
Programmable rom [prom] devices comprising field-effect components
Official title: Programmable ROM [PROM] devices comprising field-effect components (H10B20/10 takes precedence)
H10B20/20 (Programmable rom [prom] devices comprising field-effect components) appears on 1,346 US grants and 1,618 published applications in this corpus.
Search patents in H10B- Granted patents
- 1,346
- Published applications
- 1,618
- Assignees
- 255
- Inventors
- 1,666
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 3 |
| 2002 | 8 | 7 |
| 2003 | 12 | 26 |
| 2004 | 16 | 21 |
| 2005 | 15 | 33 |
| 2006 | 26 | 38 |
| 2007 | 24 | 36 |
| 2008 | 13 | 60 |
| 2009 | 24 | 48 |
| 2010 | 61 | 48 |
| 2011 | 45 | 47 |
| 2012 | 46 | 54 |
| 2013 | 57 | 58 |
| 2014 | 62 | 56 |
| 2015 | 73 | 73 |
| 2016 | 72 | 67 |
| 2017 | 86 | 84 |
| 2018 | 70 | 62 |
| 2019 | 59 | 53 |
| 2020 | 55 | 60 |
| 2021 | 68 | 107 |
| 2022 | 73 | 106 |
| 2023 | 81 | 141 |
| 2024 | 80 | 123 |
| 2025 | 122 | 131 |
| 2026 | 57 | 76 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device structure including fuse structure embedded in substrate6 Oct 2026US 12,757,389 B2Nanya Technology Corporation
- Antifuses capable of forming localized conductive links6 Oct 2026US 12,757,390 B2Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and method of manufacturing the same22 Sep 2026US 12,744,097 B2Taiwan Semiconductor Manufacturing Company.Ltd
- One time programming memory cell with gate-all-around transistor for physically unclonable function technology15 Sep 2026US 12,740,056 B2eMemory Technology Inc.
- One time programming memory including forksheet transistors and using physically unclonable function technology15 Sep 2026US 12,740,112 B2eMemory Technology Inc.
- 1.5T OTP Memory And Method For Preparing Same8 Oct 2026US 2026/0311784 A1Shanghai Huali Integrated Circuit Corporation
- One-time programmable memory devices with heater devices and methods for manufacturing and operating the same8 Oct 2026US 2026/0311785 A1Taiwan Semiconductor Manufacturing Company.Ltd
- 3d efuse with data poison8 Oct 2026US 2026/0311786 A1Advanced Micro Devices, Inc.
- Integrated circuit with back-side metal line8 Oct 2026US 2026/0313886 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices including interconnection patterns1 Oct 2026US 2026/0304758 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Three-dimensional memory array and method of fabrication829US 6,420,215 B1Matrix Semiconductor, Inc. · 2002
- Vertically stacked field programmable nonvolatile memory and method of fabrication621US 6,185,122 B2Matrix Semiconductor, Inc. · 2001
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Semiconductor device and method for manufacturing the same261US 9,419,018 B2Semiconductor Energy Laboratory Co.Ltd. · 2016