H10B 12/00
Dynamic random access memory [dram] devices
Official title: Dynamic random access memory [DRAM] devices
H10B12/00 (Dynamic random access memory [dram] devices) appears on 19,534 US grants and 19,461 published applications in this corpus.
Search patents in H10B- Granted patents
- 19,534
- Published applications
- 19,461
- Assignees
- 915
- Inventors
- 15,104
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 22 | 0 |
| 1978 | 28 | 0 |
| 1979 | 21 | 0 |
| 1980 | 31 | 0 |
| 1981 | 21 | 0 |
| 1982 | 34 | 0 |
| 1983 | 32 | 0 |
| 1984 | 26 | 0 |
| 1985 | 31 | 0 |
| 1986 | 23 | 0 |
| 1987 | 52 | 0 |
| 1988 | 50 | 0 |
| 1989 | 65 | 0 |
| 1990 | 96 | 0 |
| 1991 | 134 | 0 |
| 1992 | 146 | 0 |
| 1993 | 171 | 0 |
| 1994 | 210 | 0 |
| 1995 | 243 | 0 |
| 1996 | 218 | 0 |
| 1997 | 249 | 0 |
| 1998 | 387 | 0 |
| 1999 | 517 | 0 |
| 2000 | 700 | 0 |
| 2001 | 940 | 395 |
| 2002 | 800 | 804 |
| 2003 | 785 | 714 |
| 2004 | 761 | 841 |
| 2005 | 611 | 871 |
| 2006 | 620 | 800 |
| 2007 | 505 | 696 |
| 2008 | 489 | 616 |
| 2009 | 465 | 546 |
| 2010 | 535 | 494 |
| 2011 | 465 | 520 |
| 2012 | 430 | 626 |
| 2013 | 540 | 543 |
| 2014 | 589 | 484 |
| 2015 | 530 | 528 |
| 2016 | 497 | 409 |
| 2017 | 445 | 347 |
| 2018 | 361 | 416 |
| 2019 | 458 | 510 |
| 2020 | 510 | 709 |
| 2021 | 585 | 803 |
| 2022 | 624 | 1219 |
| 2023 | 721 | 1575 |
| 2024 | 938 | 1310 |
| 2025 | 1048 | 1395 |
| 2026 | 768 | 1290 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 12/01Manufacture or treatment14,154
- H10B 12/30Dram devices comprising one-transistor - one-capacitor [1t-1c] memory cells11,437
- H10B 12/50Peripheral circuit region structures2,483
- H10B 12/20Dram devices comprising floating-body transistors1,063
- H10B 12/10Dram devices comprising bipolar components211
Recent patents
- Memory device with container-shaped electrode and method for fabricating the same6 Oct 2026US 12,757,372 B2Nanya Technology Corporation
- Method for fabricating memory device with container-shaped electrode6 Oct 2026US 12,757,373 B2Nanya Technology Corporation
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Assembly structure including a plurality of spacers and method of manufacturing the same6 Oct 2026US 12,757,375 B2Nanya Technology Corporation
- Semiconductor memory device6 Oct 2026US 12,757,376 B2Korea University Research and Business Foundation
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Manufacturing method of a capacitor-less memory device8 Oct 2026US 2026/0313868 A1Postech Research and Business Development Foundation
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Method for manufacturing semiconductor memory device including a bit line mask pattern8 Oct 2026US 2026/0313871 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
Most cited
By later US patents
- Three dimensional structure memory1,560US 5,915,167 AElm Technology Corporation · 1999
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures742US 7,611,980 B2Micron Technology, Inc. · 2009
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Atomic layer deposited dielectric layers621US 7,192,892 B2Micron Technology, Inc. · 2007