Memory device with container-shaped electrode and method for fabricating the same

A memory device, comprising:

• a substrate;
• a landing area positioned on the substrate;
• a bottom electrode positioned on the landing area, wherein the bottom electrode has a container-shaped profile;
• a support layer positioned over the substrate and laterally surrounded the bottom electrode;
• a dielectric structure comprising:
• a dielectric layer conformally positioned on the bottom electrode and on a top surface of the support layer, and covering top corners of the support layer;
• and
• a plurality of dielectric portions conformally positioned on the dielectric layer and covering the top corners of the support layer;
• and
• a top electrode structure positioned on the dielectric structure;
• wherein the plurality of dielectric portions are sandwiched by the top electrode structure and the dielectric layer;
• wherein the top surface of the support layer is higher than a top surface of the bottom electrode;
• wherein the top electrode structure comprises:
• a top conductive layer conformally positioned on the dielectric structure and covering the top corners of the support layer;
• and
• a top electrode positioned on the top conductive layer.