H10B 12/10
Dram devices comprising bipolar components
Official title: DRAM devices comprising bipolar components
H10B12/10 (Dram devices comprising bipolar components) appears on 211 US grants and 200 published applications in this corpus.
Search patents in H10B- Granted patents
- 211
- Published applications
- 200
- Assignees
- 51
- Inventors
- 161
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 3 |
| 2003 | 2 | 0 |
| 2004 | 1 | 2 |
| 2005 | 6 | 4 |
| 2006 | 0 | 4 |
| 2007 | 6 | 6 |
| 2008 | 3 | 2 |
| 2009 | 3 | 2 |
| 2010 | 0 | 3 |
| 2011 | 2 | 7 |
| 2012 | 12 | 14 |
| 2013 | 13 | 8 |
| 2014 | 5 | 13 |
| 2015 | 14 | 10 |
| 2016 | 10 | 8 |
| 2017 | 18 | 21 |
| 2018 | 13 | 17 |
| 2019 | 15 | 19 |
| 2020 | 17 | 16 |
| 2021 | 11 | 12 |
| 2022 | 9 | 8 |
| 2023 | 8 | 6 |
| 2024 | 7 | 9 |
| 2025 | 4 | 5 |
| 2026 | 5 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Multi-layer random access memory and methods of manufacture14 Jul 2026US 12,684,757 B2TC Lab, Inc.
- Semiconductor device including memory cell including thyristor and method of manufacturing the same5 May 2026US 12,622,002 B2SK hynix Inc.
- Memory device having electrically floating body transistor27 Jan 2026US 12,538,469 B2Zeno Semiconductor, Inc.
- Memory cell using data storing bipolar device13 Jan 2026US 12,525,291 B2Zeno Semiconductor, Inc.
- Semiconductor device including memory cell including thyristor and method of manufacturing the same13 Aug 2026US 2026/0239632 A1SK hynix Inc.
- Semiconductor structure and method for forming the same4 Dec 2025US 2025/0374514 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for manufacturing the same22 May 2025US 2025/0169053 A1SK hynix Inc.
- Semiconductor device, memory device, and electronic device8 May 2025US 2025/0151261 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor devices including semiconductor pattern3 Apr 2025US 2025/0113590 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Bipolar reading technique for a memory cell having an electrically floating body transistor347US 7,477,540 B2Innovative Silicon ISi SA · 2009
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Bipolar reading technique for a memory cell having an electrically floating body transistor329US 7,301,803 B2Innovative Silicon S.A. · 2007