Semiconductor device including memory cell including thyristor and method of manufacturing the same

A semiconductor device comprising:

• a substrate;
• first and second pillar electrodes extending along a vertical direction substantially perpendicular to a surface of the substrate;
• and
• a plurality of memory cells disposed between the first and second pillar electrodes and disposed along the vertical direction,
• wherein each of the plurality of memory cells includes:
• a first shared device layer including a p-type metal oxide semiconductor material and extending along the vertical direction;
• a first base device layer, including an n-type metal oxide semiconductor material, that is disposed over the substrate to contact the first shared device layer on a plane substantially parallel to the surface of the substrate;
• a second base device layer, including a p-type metal oxide semiconductor material, that is disposed to contact the first base device layer on the plane;
• a second shared device layer, including an n-type metal oxide semiconductor material, that extends in the vertical direction and contacts the second base device layer;
• and
• a control gate electrode disposed on the second base device layer.