H10B 12/50
Peripheral circuit region structures
Official title: {Peripheral circuit region structures}
H10B12/50 (Peripheral circuit region structures) appears on 2,483 US grants and 3,360 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,483
- Published applications
- 3,360
- Assignees
- 225
- Inventors
- 3,745
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 24 | 0 |
| 2000 | 52 | 0 |
| 2001 | 65 | 33 |
| 2002 | 102 | 112 |
| 2003 | 102 | 86 |
| 2004 | 80 | 107 |
| 2005 | 78 | 105 |
| 2006 | 78 | 61 |
| 2007 | 57 | 76 |
| 2008 | 55 | 56 |
| 2009 | 54 | 58 |
| 2010 | 52 | 56 |
| 2011 | 52 | 64 |
| 2012 | 46 | 84 |
| 2013 | 60 | 61 |
| 2014 | 82 | 58 |
| 2015 | 71 | 72 |
| 2016 | 60 | 48 |
| 2017 | 65 | 52 |
| 2018 | 57 | 79 |
| 2019 | 73 | 101 |
| 2020 | 90 | 122 |
| 2021 | 118 | 162 |
| 2022 | 127 | 252 |
| 2023 | 165 | 367 |
| 2024 | 186 | 297 |
| 2025 | 226 | 397 |
| 2026 | 194 | 394 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Semiconductor memory device6 Oct 2026US 12,757,378 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device6 Oct 2026US 12,757,413 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing the same29 Sep 2026US 12,749,525 B2Nanya Technology Corporation
- Semiconductor device comprising cell gate conductive layer with top surface at different levels29 Sep 2026US 12,751,003 B2Samsung Electronics Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Method for manufacturing semiconductor memory device including a bit line mask pattern8 Oct 2026US 2026/0313871 A1Samsung Electronics Co., Ltd.
- Microelectronic devices and related memory devices8 Oct 2026US 2026/0313875 A1Micron Technology, Inc.
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices including global bitlines8 Oct 2026US 2026/0313881 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Three dimensional structure memory1,560US 5,915,167 AElm Technology Corporation · 1999
- Vertical memory device structures365US 7,378,702 B22008
- Merging write cycles by comparing at least a portion of the respective write cycle addresses296US 6,356,485 B1Integrated Device Technology, Inc. · 2002
- Method and structure for a 1T-RAM bit cell and macro263US 7,425,740 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2008
- Semiconductor memory having both volatile and non-volatile functionality and method of operating232US 7,847,338 B22010