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US 12,749,525 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorKuo-Chiang Wang
Life of this patent
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Abstract
A semiconductor device and a method for manufacturing a semiconductor device are provided. The semiconductor device includes a memory cell array, a memory interface, a first peripheral circuit, and a second peripheral circuit. The first peripheral circuit supports a first memory protocol, and the second peripheral circuit supports a second memory protocol different from the first memory protocol. The first peripheral circuit and the second peripheral circuit share the memory cell array and the memory interface.
Claims4
A method for manufacturing a semiconductor device, comprising:
- obtaining a plurality of memory chips that are fabricated on a silicon wafer using one set of masks, wherein each of the plurality of memory chips comprises a memory interface, an eFuse, a first peripheral circuit, a second peripheral circuit, and a memory cell array;
- dividing the plurality of memory chips into a first category and a second category;
- breaking the eFuse to disconnect the memory interface from the second peripheral circuit for each memory chip in the first category to support a first memory protocol;
- and
- breaking the eFuse to disconnect the memory interface from the first peripheral circuit for each memory chip in the second category to support a second memory protocol,
- wherein the second memory protocol is different from the first memory protocol.
3 more elements
Dependencies are inferred from the claim text.