H10B 12/01
Manufacture or treatment
Official title: {Manufacture or treatment}
H10B12/01 (Manufacture or treatment) appears on 14,154 US grants and 14,544 published applications in this corpus.
Search patents in H10B- Granted patents
- 14,154
- Published applications
- 14,544
- Assignees
- 691
- Inventors
- 11,769
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 7 | 0 |
| 1979 | 3 | 0 |
| 1980 | 10 | 0 |
| 1981 | 4 | 0 |
| 1982 | 13 | 0 |
| 1983 | 10 | 0 |
| 1984 | 6 | 0 |
| 1985 | 10 | 0 |
| 1986 | 12 | 0 |
| 1987 | 15 | 0 |
| 1988 | 28 | 0 |
| 1989 | 30 | 0 |
| 1990 | 36 | 0 |
| 1991 | 52 | 0 |
| 1992 | 62 | 0 |
| 1993 | 82 | 0 |
| 1994 | 89 | 0 |
| 1995 | 123 | 0 |
| 1996 | 140 | 0 |
| 1997 | 180 | 0 |
| 1998 | 290 | 0 |
| 1999 | 411 | 0 |
| 2000 | 563 | 0 |
| 2001 | 786 | 320 |
| 2002 | 632 | 634 |
| 2003 | 621 | 572 |
| 2004 | 631 | 699 |
| 2005 | 493 | 725 |
| 2006 | 517 | 672 |
| 2007 | 420 | 558 |
| 2008 | 407 | 478 |
| 2009 | 372 | 413 |
| 2010 | 427 | 388 |
| 2011 | 350 | 389 |
| 2012 | 335 | 495 |
| 2013 | 396 | 418 |
| 2014 | 443 | 340 |
| 2015 | 387 | 381 |
| 2016 | 358 | 283 |
| 2017 | 290 | 206 |
| 2018 | 230 | 266 |
| 2019 | 302 | 345 |
| 2020 | 341 | 461 |
| 2021 | 386 | 530 |
| 2022 | 434 | 841 |
| 2023 | 519 | 1153 |
| 2024 | 600 | 989 |
| 2025 | 743 | 1003 |
| 2026 | 556 | 985 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Assembly structure including a plurality of spacers and method of manufacturing the same6 Oct 2026US 12,757,375 B2Nanya Technology Corporation
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Semiconductor memory device6 Oct 2026US 12,757,378 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device with vertical channel transistors including multiple word lines6 Oct 2026US 12,757,379 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Method for manufacturing semiconductor memory device including a bit line mask pattern8 Oct 2026US 2026/0313871 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
- Semiconductor device and manufacturing method therefor, and electronic device8 Oct 2026US 2026/0313874 A1Beijing Superstring Academy of Memory Technology
- Semiconductor device with low-k spacer8 Oct 2026US 2026/0313877 A1SK hynix Inc.
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Atomic layer deposited dielectric layers621US 7,192,892 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Electronic apparatus with deposited dielectric layers586US 7,405,454 B2Micron Technology, Inc. · 2008