H10B 12/02
For one transistor one-capacitor [1t-1c] memory cells
Official title: {for one transistor one-capacitor [1T-1C] memory cells}
H10B12/02 (For one transistor one-capacitor [1t-1c] memory cells) appears on 12,645 US grants and 12,994 published applications in this corpus.
Search patents in H10B- Granted patents
- 12,645
- Published applications
- 12,994
- Assignees
- 619
- Inventors
- 10,692
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 7 | 0 |
| 1981 | 3 | 0 |
| 1982 | 8 | 0 |
| 1983 | 6 | 0 |
| 1984 | 3 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 13 | 0 |
| 1988 | 26 | 0 |
| 1989 | 29 | 0 |
| 1990 | 28 | 0 |
| 1991 | 41 | 0 |
| 1992 | 59 | 0 |
| 1993 | 77 | 0 |
| 1994 | 79 | 0 |
| 1995 | 116 | 0 |
| 1996 | 131 | 0 |
| 1997 | 167 | 0 |
| 1998 | 265 | 0 |
| 1999 | 368 | 0 |
| 2000 | 513 | 0 |
| 2001 | 722 | 278 |
| 2002 | 569 | 557 |
| 2003 | 548 | 491 |
| 2004 | 545 | 600 |
| 2005 | 422 | 647 |
| 2006 | 464 | 591 |
| 2007 | 375 | 482 |
| 2008 | 364 | 414 |
| 2009 | 302 | 362 |
| 2010 | 369 | 331 |
| 2011 | 300 | 352 |
| 2012 | 303 | 451 |
| 2013 | 349 | 382 |
| 2014 | 406 | 293 |
| 2015 | 344 | 337 |
| 2016 | 323 | 266 |
| 2017 | 271 | 191 |
| 2018 | 203 | 237 |
| 2019 | 267 | 307 |
| 2020 | 297 | 413 |
| 2021 | 352 | 485 |
| 2022 | 401 | 776 |
| 2023 | 473 | 1040 |
| 2024 | 538 | 895 |
| 2025 | 675 | 924 |
| 2026 | 505 | 892 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Assembly structure including a plurality of spacers and method of manufacturing the same6 Oct 2026US 12,757,375 B2Nanya Technology Corporation
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Semiconductor memory device6 Oct 2026US 12,757,378 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device with vertical channel transistors including multiple word lines6 Oct 2026US 12,757,379 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Method for manufacturing semiconductor memory device including a bit line mask pattern8 Oct 2026US 2026/0313871 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
- Semiconductor device and manufacturing method therefor, and electronic device8 Oct 2026US 2026/0313874 A1Beijing Superstring Academy of Memory Technology
- Semiconductor device with low-k spacer8 Oct 2026US 2026/0313877 A1SK hynix Inc.
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Atomic layer deposited dielectric layers621US 7,192,892 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Electronic apparatus with deposited dielectric layers586US 7,405,454 B2Micron Technology, Inc. · 2008