Semiconductor device with low-k spacer
AssigneeSK hynix Inc.
InventorsBeom Ho MUN, Eun Jeong KIM, Jong Kook PARK, Seung Mi LEE, Ji Won CHOI, Kyoung Tak KIM, Yun Hyuck JI
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Abstract
A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.
Claims14
A semiconductor device, comprising:
- a bit line structure formed stacked over a substrate;
- a storage node contact plug that is spaced apart from the bit line structure;
- a nitride liner disposed on sidewalls of the bit line structure;
- a low-k spacer disposed between the nitride liner and the storage node contact plug;
- an oxide spacer disposed between the low-k spacer and the storage node contact plug;
- and
- a nitride spacer disposed between the oxide spacer and the storage node contact plug.
Dependencies are inferred from the claim text.