Back to results
US 7,312,494 B2Granted
Lanthanide oxide / hafnium oxide dielectric layers
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more monolayers and a lanthanide oxide layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.
Claims28
An electronic device comprising:
- a substrate;
- a dielectric layer disposed on the substrate, the dielectric layer including:
- an atomic layer deposited hafnium oxide layer;
- and
- an electron beam evaporated lanthanide oxide layer, wherein the atomic layer deposited hafnium oxide layer disposed on the electron beam evaporated lanthanide oxide layer, wherein the electron beam evaporated lanthanide oxide layer has a predetermined amount of oxygen in addition to oxygen of the lanthanide oxide.
2 more elements
An electronic device comprising:
- a substrate;
- a dielectric layer disposed on the substrate, the dielectric layer including:
- a hafnium oxide layer arranged as one or more monolayers of hafnium oxide;
- and
- a lanthanide oxide layer, the lanthanide oxide layer having oxygen in addition to oxygen of the lanthanide oxide.
2 more elements
An electronic device comprising:
- a substrate;
- a dielectric layer disposed on the substrate, the dielectric layer including:
- a hafnium oxide layer arranged as one or more monolayers of hafnium oxide;
- a first lanthanide oxide layer, the first lanthanide oxide layer having oxygen in addition to oxygen of the lanthanide oxide;
- and
- a second lanthanide oxide layer, the second lanthanide oxide layer having a composition different from a composition of the first lanthanide oxide layer.
3 more elements
Dependencies are inferred from the claim text.