H10B 12/03
Making the capacitor or connections thereto
Official title: {Making the capacitor or connections thereto}
H10B12/03 (Making the capacitor or connections thereto) appears on 9,114 US grants and 8,556 published applications in this corpus.
Search patents in H10B- Granted patents
- 9,114
- Published applications
- 8,556
- Assignees
- 494
- Inventors
- 8,518
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 5 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 6 | 0 |
| 1986 | 4 | 0 |
| 1987 | 12 | 0 |
| 1988 | 20 | 0 |
| 1989 | 27 | 0 |
| 1990 | 28 | 0 |
| 1991 | 36 | 0 |
| 1992 | 56 | 0 |
| 1993 | 72 | 0 |
| 1994 | 71 | 0 |
| 1995 | 104 | 0 |
| 1996 | 121 | 0 |
| 1997 | 161 | 0 |
| 1998 | 245 | 0 |
| 1999 | 332 | 0 |
| 2000 | 450 | 0 |
| 2001 | 626 | 243 |
| 2002 | 461 | 431 |
| 2003 | 448 | 397 |
| 2004 | 458 | 491 |
| 2005 | 339 | 521 |
| 2006 | 376 | 442 |
| 2007 | 284 | 336 |
| 2008 | 273 | 264 |
| 2009 | 198 | 204 |
| 2010 | 226 | 203 |
| 2011 | 166 | 179 |
| 2012 | 168 | 226 |
| 2013 | 171 | 210 |
| 2014 | 209 | 155 |
| 2015 | 202 | 203 |
| 2016 | 194 | 175 |
| 2017 | 160 | 118 |
| 2018 | 129 | 152 |
| 2019 | 158 | 185 |
| 2020 | 209 | 283 |
| 2021 | 242 | 317 |
| 2022 | 263 | 532 |
| 2023 | 321 | 652 |
| 2024 | 360 | 535 |
| 2025 | 422 | 556 |
| 2026 | 287 | 546 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Assembly structure including a plurality of spacers and method of manufacturing the same6 Oct 2026US 12,757,375 B2Nanya Technology Corporation
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Memory device having improved P-N junction and manufacturing method thereof6 Oct 2026US 12,757,380 B2Nanya Technology Corporation
- Semiconductor structure having dielectric liner and method of manufacturing the same6 Oct 2026US 12,757,381 B2Nanya Technology Corporation
- Semiconductor device and manufacturing method therefor, and electronic device8 Oct 2026US 2026/0313874 A1Beijing Superstring Academy of Memory Technology
- Semiconductor device with low-k spacer8 Oct 2026US 2026/0313877 A1SK hynix Inc.
- Capacitor, method of manufacturing capacitor, and method of manufacturing memory device8 Oct 2026US 2026/0313923 A1EGTM Co., Ltd.
- Memory Circuitry And Methods Used In Forming Memory Circuitry1 Oct 2026US 2026/0304737 A1Micron Technology, Inc.
- Semiconductor devices1 Oct 2026US 2026/0304738 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Method of manufacturing charge storage device553US 7,405,166 B2Industrial Technology Research Institute · 2008
- Uniform dielectric film deposition on textured surfaces542US 5,801,104 AMicron Technology, Inc. · 1998
- Conformal thin films over textured capacitor electrodes542US 6,780,704 B1ASM International N.V. · 2004