H10B 12/036
The capacitor extending under the transistor
Official title: {the capacitor extending under the transistor}
H10B12/036 (The capacitor extending under the transistor) appears on 194 US grants and 240 published applications in this corpus.
Search patents in H10B- Granted patents
- 194
- Published applications
- 240
- Assignees
- 39
- Inventors
- 398
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 5 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 4 | 0 |
| 2001 | 10 | 2 |
| 2002 | 11 | 11 |
| 2003 | 10 | 5 |
| 2004 | 6 | 6 |
| 2005 | 2 | 3 |
| 2006 | 4 | 5 |
| 2007 | 4 | 2 |
| 2008 | 3 | 0 |
| 2009 | 1 | 1 |
| 2010 | 2 | 1 |
| 2011 | 0 | 2 |
| 2012 | 1 | 1 |
| 2013 | 1 | 2 |
| 2014 | 2 | 1 |
| 2015 | 4 | 12 |
| 2016 | 11 | 4 |
| 2017 | 5 | 5 |
| 2018 | 5 | 6 |
| 2019 | 5 | 5 |
| 2020 | 4 | 8 |
| 2021 | 9 | 13 |
| 2022 | 11 | 35 |
| 2023 | 13 | 27 |
| 2024 | 19 | 16 |
| 2025 | 23 | 31 |
| 2026 | 8 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits266US 5,943,581 AVanguard International Semiconductor Corporation · 1999
- Method for fabricating a high-density semiconductor memory device149US 6,297,090 B1Samsung Electronics Co., Ltd. · 2001
- Method for making a dynamic random access memory using silicon-on-insulator techniques146US 5,631,186 ASamsung Electronics Co., Ltd. · 1997
- Dynamic access memory using silicon-on-insulator140US 5,939,745 ASamsung Electronics Co., Ltd. · 1999
- Dynamic random access memory using silicon-on-insulator techniques134US 5,968,840 ASamsung Electronics Co., Ltd. · 1999