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US 12,648,128 B1Granted
Semiconductor structure, method for manufacturing semiconductor structure, memory and method for manufacturing memory
AssigneeChangxin Memory Technologies, Inc.
InventorsKanyu Cao, Tzung-Han Lee, Chih-Cheng Liu, Huaiwei Yang
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Abstract
A semiconductor structure is provided. The semiconductor structure includes: a substrate; a plurality of capacitors arranged in the substrate; and a plurality of active pillars arranged above the substrate. Each of the plurality of active pillars is arranged above a respective one of the plurality of capacitors, and a bottom portion of each of the plurality of active pillars is electrically connected to a top portion of the respective one of the plurality of capacitors therebelow.
Claims8
A semiconductor structure, comprising:
- a substrate;
- a mask layer covering an upper surface of the substrate;
- a plurality of capacitors arranged in the substrate, each of a plurality of capacitors including a capacitor upper electrode, a capacitor dielectric layer and a capacitor lower electrode;
- a plurality of active pillars arranged above the substrate;
- and
- a contact, the contact and the plurality of active pillars being arranged on a same side of the substrate,
- wherein each of the plurality of active pillars is arranged above a respective one of the plurality of capacitors, and a bottom portion of each of the plurality of active pillars is electrically connected to the capacitor upper electrode, and a bottom portion of the contact is electrically connected to the capacitor lower electrode, and the capacitor lower electrode covers an upper surface of the mask layer, the contact passes through the capacitor lower electrode and the mask layer.
4 more elements
Dependencies are inferred from the claim text.