Semiconductor device including active pattern and conductive shield structure

A semiconductor device, comprising:

• a first bit line and a second bit line each extending in a first direction and adjacent to each other in a second direction perpendicular to the first direction;
• a first active pattern and a second active pattern each including a first region, a second region, and a channel region between the first and second regions, wherein the first region of the first active pattern is connected to the first bit line in a third direction perpendicular to the first and second directions, and the first region of the second active pattern is connected to the second bit line in the third direction;
• a word line facing the channel regions of the first and second active patterns;
• and
• a conductive shield structure disposed between the first bit line and the second bit line, and between the first region of the first active pattern and the first region of the second active pattern,
• wherein the conductive shield structure includes:
• a first shield pattern between the first region of the first active pattern and the first region of the second active pattern;
• and
• a second shield pattern between the first and second bit lines,
• wherein the first shield pattern includes a first material having a first work function, and
• wherein the second shield pattern includes a second material having a second work function, and
• wherein the second work function is different from the first work function.

A semiconductor device, comprising:

• a first structure including cell active patterns, bit lines, word lines, and a conductive shield structure;
• and
• a second structure disposed on and bonded to the first structure,
• wherein the second structure includes a bit line sense amplifier electrically connected to the bit lines, a sub-word line driver electrically connected to the word lines, and a voltage control circuit electrically connected to the conductive shield structure,
• wherein each of the bit lines extends in a first direction,
• wherein the bit lines include a first bit line and a second bit line adjacent to each other in a second direction perpendicular to the first direction,
• wherein each of the active patterns includes a first source/drain region and a second source/drain region spaced apart from each other in a third direction, and a channel region between the first and second source/drain regions,
• wherein the third direction is perpendicular to the first and second directions,
• wherein the word lines face the channel regions of the active patterns adjacent to the word lines,
• wherein the active patterns include a first active pattern connected to the first bit line and a second active pattern connected to the second bit line,
• wherein the first source/drain region of the first active pattern is connected to the first bit line in the third direction,
• wherein the first source/drain region of the second active pattern is connected to the second bit line in the third direction, and
• wherein the conductive shield structure includes a first shield pattern disposed between the first source/drain region of the first active pattern and the first source/drain region of the second active pattern.