H10B 12/038
The capacitor being in a trench in the substrate
Official title: {the capacitor being in a trench in the substrate}
H10B12/038 (The capacitor being in a trench in the substrate) appears on 2,021 US grants and 1,618 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,021
- Published applications
- 1,618
- Assignees
- 197
- Inventors
- 2,235
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 9 | 0 |
| 1988 | 14 | 0 |
| 1989 | 20 | 0 |
| 1990 | 21 | 0 |
| 1991 | 17 | 0 |
| 1992 | 14 | 0 |
| 1993 | 25 | 0 |
| 1994 | 15 | 0 |
| 1995 | 20 | 0 |
| 1996 | 19 | 0 |
| 1997 | 27 | 0 |
| 1998 | 27 | 0 |
| 1999 | 57 | 0 |
| 2000 | 77 | 0 |
| 2001 | 127 | 50 |
| 2002 | 135 | 102 |
| 2003 | 144 | 136 |
| 2004 | 169 | 175 |
| 2005 | 127 | 215 |
| 2006 | 139 | 124 |
| 2007 | 84 | 98 |
| 2008 | 85 | 73 |
| 2009 | 50 | 56 |
| 2010 | 52 | 37 |
| 2011 | 40 | 18 |
| 2012 | 29 | 39 |
| 2013 | 34 | 47 |
| 2014 | 43 | 33 |
| 2015 | 41 | 38 |
| 2016 | 43 | 33 |
| 2017 | 35 | 26 |
| 2018 | 27 | 26 |
| 2019 | 32 | 26 |
| 2020 | 31 | 43 |
| 2021 | 41 | 31 |
| 2022 | 24 | 35 |
| 2023 | 24 | 64 |
| 2024 | 30 | 36 |
| 2025 | 42 | 32 |
| 2026 | 27 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Assembly structure including a plurality of spacers and method of manufacturing the same6 Oct 2026US 12,757,375 B2Nanya Technology Corporation
- Semiconductor memory device and method for fabricating same15 Sep 2026US 12,740,050 B2Hangzhou HFC Semiconductor Co.
- Memory devices having vertical transistors and fabricating methods thereof15 Sep 2026US 12,740,051 B2Yangtze Memory Technologies Co., Ltd.
- Memory device and fabrication method thereof8 Sep 2026US 12,733,154 B2Nanya Technology Corporation
- Memory devices having vertical transistors and methods for forming the same25 Aug 2026US 12,720,725 B2Yangtze Memory Technologies Co., Ltd.
- Memory Circuitry And Methods Used In Forming Memory Circuitry1 Oct 2026US 2026/0304756 A1Micron Technology, Inc.
- Microelectronic devices including vertical channel access devices, and related methods and memory devices24 Sep 2026US 2026/0293108 A1Micron Technology, Inc.
- Assembly structure including a plurality of spacers and method of manufacturing the same17 Sep 2026US 2026/0282318 A1Nanya Technology Corporation
- Memory devices having vertical transistors and fabricating methods thereof17 Sep 2026US 2026/0282330 A1Yangtze Memory Technologies Co., Ltd.
- Memory devices having vertical transistors and methods for forming the same27 Aug 2026US 2026/0255573 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Conformal thin films over textured capacitor electrodes542US 6,780,704 B1ASM International N.V. · 2004
- Technique to deposit sidewall passivation for high aspect ratio cylinder etch440US 9,997,373 B2Lam Research Corporation · 2018
- Process for manufacturing vertical dynamic random access memories409US 5,106,775 AHitachi, Ltd. · 1992
- SOI stacked DRAM logic395US 6,544,837 B1International Business Machines Corporation · 2003
- Semiconductor device and method of manufacturing the same372US 6,737,716 B1Kabushiki Kaisha Toshiba · 2004