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US 6,737,716 B1Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKouji Matsuo, Tomohiro Saito, Kyoichi Suguro, Shinichi Nakamura
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Abstract
Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating film consisting of a metal oxide film or a metal silicate film by oxidizing the metal compound film, and forming an electrode on the metal-containing insulating film.
Claims7
A semiconductor device, comprising:
- a semiconductor substrate;
- a metal-containing insulating film formed directly or indirectly on said semiconductor substrate, said metal-containing insulating film including a plurality of first insulating regions each of which is formed of a grain containing a metal oxide and a second insulating region
- formed of an amorphous insulating material, each of said first insulating regions being formed in said second insulating region;
- and
- an electrode formed on said metal-containing insulating film.
2 more elements
A semiconductor device, comprising:
- a first metal oxide insulating film formed directly or indirectly on a semiconductor substrate;
- a second metal oxide insulating film formed on said first metal oxide insulating film;
- and
- an electrode formed on said second metal oxide insulating film,
- wherein, the decrease of the Gibbs free energy at the time when a metal contained in the electrode forms an oxide is larger than that at the time when a metal contained in the first metal oxide insulating film forms an oxide, and the decrease of the Gibbs free energy at the time when a metal contained in the second metal oxide insulating film forms an oxide is larger than or equal to that at the time when the metal contained in the electrode forms an oxide.
2 more elements
Dependencies are inferred from the claim text.