H10B 12/0385
Making a connection between the transistor and the capacitor
Official title: {Making a connection between the transistor and the capacitor, e.g. buried strap}
H10B12/0385 (Making a connection between the transistor and the capacitor) appears on 497 US grants and 467 published applications in this corpus.
Search patents in H10B- Granted patents
- 497
- Published applications
- 467
- Assignees
- 81
- Inventors
- 695
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 13 | 0 |
| 2001 | 43 | 11 |
| 2002 | 44 | 25 |
| 2003 | 29 | 25 |
| 2004 | 46 | 68 |
| 2005 | 41 | 78 |
| 2006 | 48 | 38 |
| 2007 | 34 | 32 |
| 2008 | 26 | 19 |
| 2009 | 12 | 17 |
| 2010 | 10 | 11 |
| 2011 | 10 | 5 |
| 2012 | 6 | 15 |
| 2013 | 14 | 10 |
| 2014 | 11 | 13 |
| 2015 | 9 | 16 |
| 2016 | 20 | 16 |
| 2017 | 18 | 12 |
| 2018 | 8 | 9 |
| 2019 | 9 | 9 |
| 2020 | 8 | 8 |
| 2021 | 15 | 8 |
| 2022 | 7 | 2 |
| 2023 | 2 | 8 |
| 2024 | 3 | 3 |
| 2025 | 6 | 6 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device and method for fabricating same15 Sep 2026US 12,740,050 B2Hangzhou HFC Semiconductor Co.
- Memory device and method for manufacturing memory device16 Dec 2025US 12,501,609 B2Changxin Memory Technologies, Inc.
- Semiconductor structure and forming method thereof4 Nov 2025US 12,464,699 B2HeFeChip Corporation Limited
- Semiconductor structure, method for manufacturing semiconductor structure, and memory23 Sep 2025US 12,426,255 B2Changxin Memory Technologies, Inc.
- Vertical DRAM structure and method of formation3 Jun 2025US 12,324,146 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with integrated high density trench capacitor structures4 Jun 2026US 2026/0156841 A1
- Semiconductor structure and method of forming same29 Jan 2026US 2026/0032881 A1HeFeChip Corporation Limited
- Semiconductor structure and method of manufacturing the same8 Jan 2026US 2026/0013114 A1Nanya Technology Corporation
- Fabrication method for semiconductor structure and semiconductor structure11 Dec 2025US 2025/0380400 A1CXMT Corporation
- Semiconductor memory device and method for fabricating same23 Oct 2025US 2025/0331163 A1Hangzhou HFC Semiconductor Co.
Most cited
By later US patents
- SOI stacked DRAM logic395US 6,544,837 B1International Business Machines Corporation · 2003
- Trench dram cell with vertical device and buried word lines369US 5,977,579 AMicron Technology, Inc. · 1999
- Method for the production of a self-adjusted structure on a semiconductor wafer197US 7,041,568 B2Infineon Technologies AG · 2006
- Trench storage dynamic random access memory cell with vertical transfer device145US 6,225,158 B1International Business Machines Corporation · 2001
- SIO stacked DRAM logic141US 6,590,258 B2International Business Machines Corporation · 2003