Semiconductor structure and method of forming same

A semiconductor structure, comprising:

• a substrate comprising a doped substrate layer, a buried oxide layer and a device layer, wherein the device layer forms at least one fin;
• at least one deep trench capacitor formed in the substrate, wherein each deep trench capacitor comprises an inner electrode formed in a deep trench in the substrate and a node dielectric layer between the inner electrode and the doped substrate layer, wherein each of the deep trench and the inner electrode extends through the device layer and the buried oxide layer into the doped substrate layer, and wherein the inner electrode comprises a fin contact connected to the corresponding fin;
• a plurality of word lines formed on the substrate, wherein at least one of the word lines intersects the at least one fin and provides a gate of a transistor formed on a surface of each fin, wherein sidewalls of each word line are covered by spacers;
• a word line isolation layer formed on the substrate, wherein at least one of the word lines passes over and is separated by the word line isolation layer from the inner electrodes, wherein the word line isolation layer covers a surface of a portion of the inner electrode between the buried oxide layer and the fin contact, and wherein the fin is exposed from the word line isolation layer;
• and
• a source/drain epitaxial structure formed on the surface of the fin located on opposite sides of the word line.