Method for the production of a self-adjusted structure on a semiconductor wafer

A method for fabricating a self-aligned structure on a semiconductor wafer, comprising:

• forming a structure on a layer surface of the semiconductor wafer with at least one first area region, at which an electromagnetic radiation is reflected, and at least one second, essentially nonreflecting area region;
• producing a light-transmissive insulation layer at least on the two area regions of the layer surface;
• producing a light-sensitive layer on the light-transmissive insulation layer;
• radiating a parallel electromagnetic beam of rays onto a surface of the light-sensitive layer;
• developing the light-sensitive layer,
• wherein
• the parallel electromagnetic beam of rays is directed onto the light-sensitive layer with an angle Θ of incidence and the angle Θ of incidence is prescribed such that the structure of the layer surface is imaged with a lateral offset into the light-sensitive layer.