Semiconductor devices with integrated high density trench capacitor structures

A semiconductor device, comprising:

• a well region disposed in a semiconductor layer;
• a dielectric layer disposed over the well region and extending above a top surface of the semiconductor layer;
• an array of trenches disposed within the dielectric layer and the well region, the trenches extending from a top surface of the dielectric layer into the well region;
• an insulating layer disposed on sidewalls and bottoms of the trenches;
• a conductive layer disposed within the trenches, the conductive layer extending from the top surface of the dielectric layer to the insulating layer at the bottoms of the trenches;
• a first contact that provides a first terminal connecting to the well region at the top surface of the semiconductor layer;
• and
• second contacts that provide a second terminal connecting to top surfaces of the conductive layer within the trenches.

A method of fabricating a semiconductor device, comprising:

• forming a well region in a semiconductor layer;
• forming an array of trenches within the well region, the trenches extending from a top surface of the semiconductor layer into the well region;
• forming an insulating layer on sidewalls and bottoms of the trenches;
• forming a conductive layer within the trenches, the conductive layer extending from the top surface of the semiconductor layer to the insulating layer at the bottoms of the trenches;
• forming a first contact that provides a first terminal connecting to the well region at the top surface of the semiconductor layer;
• and
• forming second contacts that provide a second terminal connecting to top surfaces of the conductive layer within the trenches.

A semiconductor device, comprising:

• a well region disposed in a semiconductor layer;
• an array of trenches disposed within the well region, the trenches extending from a top surface of the semiconductor layer into the well region;
• an insulating layer disposed on sidewalls and bottoms of the trenches;
• a conductive layer disposed within the trenches, the conductive layer extending from the top surface of the semiconductor layer to the insulating layer at the bottoms of the trenches;
• a first contact that provides a first terminal connecting to the well region at the top surface of the semiconductor layer;
• and
• second contacts that provide a second terminal connecting to top surfaces of the conductive layer within the trenches.