Conformal thin films over textured capacitor electrodes

A method of forming a capacitor in an integrated circuit, comprising:

• constructing a bottom electrode including a textured silicon layer, the textured silicon layer having hemispherical grain (HSG) morphology;
• and
• depositing a high k dielectric layer directly over the textured silicon layer wherein depositing comprises:
• forming no more than about one monolayer of a first material over the textured silicon layer by exposure to a first reactant species, the first material being self-terminated with halide ligands;
• and
• reacting a second reactant species with the first material to leave no more than about one monolayer of a second material, wherein the first reactant species comprises a zirconium halide and the second reactant species comprises an oxygen-containing source gas.

A method of forming a capacitor in an integrated circuit, comprising:

• constructing a bottom electrode including a textured silicon layer, the textured silicon layer having hemispherical grain (HSG) morphology;
• and
• depositing a high k dielectric layer directly over the textured silicon layer wherein depositing comprises:
• forming no more than about one monolayer of a first material over the textured silicon layer by exposure to a first reactant species, the first material being self-terminated with halide ligands;
• and
• reacting a second reactant species with the first material to leave no more than about one monolayer of a second material, wherein the first material comprises ethoxide-terminated tantalum and the second reactant species comprises an oxygen-containing source gas.

A process of forming a capacitor dielectric having a dielectric constant of greater than or equal to about 20 over a hemispherical grain silicon surface, comprising:

• directly coating the hemispherical grain silicon surface with no more than about one monolayer of a ligand-terminated metal complex in a first phase;
• replacing ligands of the ligand-terminated metal with oxygen in a second phase distinct from the first phase;
• and
• repeating the first and second phases in at least about 10 cycles to form the capacitor dielectric having a dielectric constant of greater than or equal to about 20.

A process of forming a capacitor dielectric having a dielectric constant of about 10 over a hemispherical grain silicon surface, comprising:

• directly coating the hemispherical grain silicon surface with no more than about one monolayer of a ligand-terminated metal complex in a first phase;
• replacing ligands of the ligand-terminated metal with oxygen in a second phase distinct from the first phase;
• and
• repeating the first and second phases in at least about 10 cycles, wherein the ligand-terminated metal comprises a metal ethoxide complex.

A method of forming a capacitor with high surface area in an integrated circuit, comprising:

• forming a bottom electrode in a three-dimensional folding shape;
• superimposing a hemispherical grain silicon layer over the three-dimensional folding shape;
• and
• depositing a high k dielectric layer conformally directly over the textured morphology by cyclically supplying at least three alternating, self-terminating chemistries, wherein no more than one monolayer is formed per cycle, and wherein the dielectric layer comprises silicon, oxygen and a metal.

A method of forming a capacitor in an integrated circuit, comprising:

• constructing a bottom electrode including a textured silicon layer, the textured silicon layer having hemispherical grain (HSG) morphology;
• and
• depositing a high k dielectric layer directly over the textured silicon layer wherein depositing comprises:
• forming no more than about one monolayer of a first material over the textured silicon layer by exposure to a first reactant species;
• and
• reacting a second reactant species with the first material to leave no more than about one monolayer of a second material, and
• wherein the dielectric layer is selected from the group consisting of tantalum oxide, titanium oxide, zirconium oxide, niobium oxide, hafnium oxide and mixtures and compounds thereof.