H10B 12/0383
Wherein the transistor is vertical
Official title: {wherein the transistor is vertical}
H10B12/0383 (Wherein the transistor is vertical) appears on 460 US grants and 332 published applications in this corpus.
Search patents in H10B- Granted patents
- 460
- Published applications
- 332
- Assignees
- 67
- Inventors
- 513
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 7 | 0 |
| 1990 | 8 | 0 |
| 1991 | 6 | 0 |
| 1992 | 8 | 0 |
| 1993 | 11 | 0 |
| 1994 | 6 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 6 | 0 |
| 1999 | 10 | 0 |
| 2000 | 15 | 0 |
| 2001 | 31 | 15 |
| 2002 | 42 | 37 |
| 2003 | 49 | 33 |
| 2004 | 60 | 61 |
| 2005 | 44 | 57 |
| 2006 | 33 | 14 |
| 2007 | 17 | 12 |
| 2008 | 11 | 8 |
| 2009 | 7 | 5 |
| 2010 | 5 | 1 |
| 2011 | 7 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 3 |
| 2014 | 0 | 1 |
| 2015 | 3 | 4 |
| 2016 | 2 | 1 |
| 2017 | 2 | 2 |
| 2018 | 3 | 4 |
| 2019 | 4 | 6 |
| 2020 | 7 | 5 |
| 2021 | 6 | 7 |
| 2022 | 3 | 7 |
| 2023 | 5 | 22 |
| 2024 | 6 | 11 |
| 2025 | 10 | 4 |
| 2026 | 15 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory devices having vertical transistors and fabricating methods thereof15 Sep 2026US 12,740,051 B2Yangtze Memory Technologies Co., Ltd.
- Memory devices having vertical transistors and methods for forming the same25 Aug 2026US 12,720,725 B2Yangtze Memory Technologies Co., Ltd.
- Memory devices having vertical transistors and fabricating methods thereof23 Jun 2026US 12,666,597 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor structure, method for manufacturing semiconductor structure, memory and method for manufacturing memory2 Jun 2026US 12,648,128 B1Changxin Memory Technologies, Inc.
- Memory devices having vertical transistors and methods for forming the same12 May 2026US 12,628,328 B2Yangtze Memory Technologies Co., Ltd.
- Microelectronic devices including vertical channel access devices, and related methods and memory devices24 Sep 2026US 2026/0293108 A1Micron Technology, Inc.
- Memory devices having vertical transistors and fabricating methods thereof17 Sep 2026US 2026/0282330 A1Yangtze Memory Technologies Co., Ltd.
- Memory devices having vertical transistors and methods for forming the same27 Aug 2026US 2026/0255573 A1Yangtze Memory Technologies Co., Ltd.
- Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, Methods Used In Forming An Array Of Capacitors, And Methods Used In Forming A Plurality Of Horizontally-Spaced Conductive Lines27 Aug 2026US 2026/0255683 A1Micron Technology, Inc.
- Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same2 Jul 2026US 2026/0190326 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Process for manufacturing vertical dynamic random access memories409US 5,106,775 AHitachi, Ltd. · 1992
- Trench dram cell with vertical device and buried word lines369US 5,977,579 AMicron Technology, Inc. · 1999
- Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography323US 5,013,680 AMicron Technology, Inc. · 1991
- Method of making memory cell with vertical transistor and buried word and body lines239US 5,909,618 AMicron Technology, Inc. · 1999
- Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance189US 5,122,848 AMicron Technology, Inc. · 1992