Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun-Feng KAO, Katherine H. CHIANG
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Abstract
A semiconductor device includes an insulating base including a trench, a transistor including a gate electrode and vertical channel in the trench, and a source electrode in the insulating base outside the trench, an isolation layer on the gate electrode in the trench, and a capacitor including a trench capacitor portion that is on the isolation layer in the trench, and a stacked capacitor portion that is coupled to the source electrode of the transistor outside the trench.
Claims20
A semiconductor device comprising
- an insulating structure defining a trench having a first depth portion and a second depth portion;
- a transistor having a vertical channel disposed along a sidewall of the first depth portion of the trench and a source electrode located outside the trench;
- an isolation layer disposed along a surface of the trench and extending across a transition between the first depth portion and the second depth portion;
- a conductive capacitor electrode disposed on the isolation layer within the second depth portion of the trench;
- and
- a conductive capacitor structure disposed outside the trench and electrically coupled to the source electrode,
- wherein the isolation layer electrically separates the transistor from the conductive capacitor electrode and from the conductive capacitor structure.
A memory device comprising
- a dielectric body defining a trench;
- a vertical channel transistor having a gate region disposed within the trench and a source electrode disposed in the dielectric body outside the trench;
- an electrically insulating layer disposed on a side of the gate region in the trench;
- a first capacitor electrode disposed in the trench, wherein the electrically insulating layer is between the first capacitor electrode and the gate region;
- and
- a second capacitor electrode disposed outside the trench wherein the electrically insulating layer is between the second capacitor electrode and the gate region,
- wherein the first capacitor electrode is connected to the second capacitor electrode and electrically coupled to the source electrode through the second capacitor electrode.
A method of forming a semiconductor device comprising
- forming a trench in an insulating material to a first depth;
- forming a gate structure and a vertical channel along a sidewall of the trench at the first depth;
- extending the trench to a second depth below the gate structure;
- forming an isolation layer on a surface of the gate structure and along a surface of the trench at the second depth;
- forming a conductive layer on the isolation layer at the second depth;
- forming a source electrode outside the trench;
- and
- forming a capacitor electrode structure outside the trench and electrically connected to the conductive layer and to the source electrode.
Dependencies are inferred from the claim text.