Memory devices having vertical transistors and fabricating methods thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHe Chen, Ziqun Hua, Yanhong Wang, Wei Liu
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Abstract
A three-dimensional (3D) memory device and a fabricating method thereof are disclosed. The 3D memory device can comprise an array of memory cells. Each memory cell can comprise a capacitor and a vertical transistor. The vertical transistor can comprise a semiconductor body extending in a vertical direction and in contact with the capacitor, and a three-sided gate structure surrounding the semiconductor body from three lateral directions. The 3D memory device can further comprise a memory controller configured to control the array of memory cells.
Claims20
A semiconductor device, comprising:
- an array of memory cells, each memory cell comprising:
- a capacitor;
- and
- a vertical transistor comprising:
- a semiconductor body extending in a vertical direction, comprising a curved sidewall, and in contact with the capacitor, and
- a gate structure surrounding the curved sidewall of the semiconductor body.
A semiconductor device, comprising:
- a first word line extending along a first direction and comprising a plurality of first curved recesses;
- and
- a plurality of first semiconductor bodies arranged along the first direction, each of the first semiconductor bodies extending along a second direction perpendicular to the first direction,
- wherein at least a part of each of the first semiconductor bodies is in a corresponding one of the first curved recesses.
A memory system, comprising:
- an array of memory cells, each memory cell comprising:
- a capacitor;
- and
- a vertical transistor comprising:
- a semiconductor body extending in a vertical direction, comprising a curved sidewall, and in contact with the capacitor, and
- a gate structure surrounding the curved sidewall of the semiconductor body;
- and
- a memory controller configured to control the array of memory cells.
Dependencies are inferred from the claim text.