Semiconductor device and manufacturing method therefor, and electronic device

A manufacturing method for a semiconductor device, comprising:

• forming conductive layers and insulating layers disposed alternately and sequentially on a substrate;
• performing patterned etching to form a plurality of trenches perpendicular to the substrate, wherein the conductive layers respectively form patterned structures mutually stacked and sequentially circularly distributed, and each layer of the patterned structures comprises a bit line and a plurality of branches extending in a direction perpendicular to the bit line;
• filling the trenches with a dielectric layer;
• performing patterned etching to expose ends of the plurality of branches away from the bit line;
• performing wet selective etching to remove each of the branches wrapped by the dielectric layer and the insulating layers to form a trench body extending along a direction parallel to the substrate, wherein the trench body exposes the bit line of a corresponding region;
• forming a continuously distributed metal oxide conductive thin film in the trench body, so that different regions of the metal oxide conductive thin film form a first capacitor electrode, a first electrode, a channel and a second electrode;
• wherein the second electrode is connected to the bit line exposed;
• performing patterned etching to remove the dielectric layer and the insulating layers to expose the metal oxide conductive thin film in a region corresponding to the first capacitor electrode;
• and
• sequentially forming a capacitor dielectric layer and a second capacitor electrode on an outer side wall and an inner side wall of the metal oxide conductive thin film in the region corresponding to the first capacitor electrode.