H10B 12/05
Making the transistor
Official title: {Making the transistor}
H10B12/05 (Making the transistor) appears on 5,215 US grants and 6,734 published applications in this corpus.
Search patents in H10B- Granted patents
- 5,215
- Published applications
- 6,734
- Assignees
- 322
- Inventors
- 5,791
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 6 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 6 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 6 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 10 | 0 |
| 1995 | 15 | 0 |
| 1996 | 12 | 0 |
| 1997 | 7 | 0 |
| 1998 | 24 | 0 |
| 1999 | 57 | 0 |
| 2000 | 105 | 0 |
| 2001 | 149 | 52 |
| 2002 | 157 | 185 |
| 2003 | 157 | 148 |
| 2004 | 154 | 178 |
| 2005 | 132 | 209 |
| 2006 | 134 | 204 |
| 2007 | 146 | 190 |
| 2008 | 124 | 180 |
| 2009 | 133 | 182 |
| 2010 | 167 | 158 |
| 2011 | 154 | 200 |
| 2012 | 166 | 270 |
| 2013 | 206 | 213 |
| 2014 | 230 | 172 |
| 2015 | 186 | 204 |
| 2016 | 207 | 157 |
| 2017 | 166 | 121 |
| 2018 | 124 | 136 |
| 2019 | 164 | 190 |
| 2020 | 145 | 224 |
| 2021 | 200 | 289 |
| 2022 | 249 | 443 |
| 2023 | 259 | 664 |
| 2024 | 299 | 553 |
| 2025 | 419 | 574 |
| 2026 | 313 | 638 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor memory device with vertical channel transistors including multiple word lines6 Oct 2026US 12,757,379 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Memory circuitry and methods used in forming memory circuitry6 Oct 2026US 12,757,382 B2Micron Technology, Inc.
- Memory cell with reduced parasitic capacitance and conductive via extending into source/drain region6 Oct 2026US 12,757,383 B2Nanya Technology Corporation
- Memory cell with reduced parasitic capacitance and spacer between u-shaped liner and air gap6 Oct 2026US 12,757,384 B2Nanya Technology Corporation
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,387 B2Nanya Technology Corporation
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, memory device, and method for manufacturing semiconductor device8 Oct 2026US 2026/0313879 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and method for manufacturing the same8 Oct 2026US 2026/0313880 A1SK hynix Inc.
- Semiconductor device including channel layer8 Oct 2026US 2026/0313960 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Lanthanide oxide / hafnium oxide dielectric layers627US 7,192,824 B2Micron Technology, Inc. · 2007
- Atomic layer deposited dielectric layers621US 7,192,892 B2Micron Technology, Inc. · 2007
- Lanthanide oxide / hafnium oxide dielectric layers601US 7,312,494 B2Micron Technology, Inc. · 2007
- Electronic apparatus with deposited dielectric layers586US 7,405,454 B2Micron Technology, Inc. · 2008