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US 12,757,387 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorJhen-Yu Tsai
Life of this patent
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Abstract
A semiconductor device includes a substrate, a first word line, a barrier layer, a first insulating layer and a second insulating layer. The first word line is in the substrate. The barrier layer cups an underside of the first word line. The first insulating layer extends along a top surface of the first word line and is laterally surrounded by the barrier layer. The second insulating layer is on the first insulating layer and laterally surrounded by the barrier layer. The second insulating layer has a material different from a material of the first insulating layer.
Claims9
A semiconductor device, comprising:
- a substrate;
- a first word line in the substrate;
- a second word line in the substrate;
- a barrier layer cupping an underside of each of the first word line and the second word line;
- a first insulating layer extending along a top surface of the first word line and a top surface of the second word line, wherein the first insulating layer is laterally surrounded by the barrier layer, and wherein the first insulating layer on the second word line has a top surface higher than a top surface of the first insulating layer on the first word line;
- and
- a second insulating layer on the first insulating layer and laterally surrounded by the barrier layer, wherein the second insulating layer has a material different from a material of the first insulating layer.
4 more elements
Dependencies are inferred from the claim text.