H10B 12/30
Dram devices comprising one-transistor - one-capacitor [1t-1c] memory cells
Official title: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells}
H10B12/30 (Dram devices comprising one-transistor - one-capacitor [1t-1c] memory cells) appears on 11,437 US grants and 12,012 published applications in this corpus.
Search patents in H10B- Granted patents
- 11,437
- Published applications
- 12,012
- Assignees
- 562
- Inventors
- 10,135
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 10 | 0 |
| 1978 | 14 | 0 |
| 1979 | 14 | 0 |
| 1980 | 18 | 0 |
| 1981 | 7 | 0 |
| 1982 | 23 | 0 |
| 1983 | 15 | 0 |
| 1984 | 15 | 0 |
| 1985 | 12 | 0 |
| 1986 | 16 | 0 |
| 1987 | 38 | 0 |
| 1988 | 32 | 0 |
| 1989 | 55 | 0 |
| 1990 | 83 | 0 |
| 1991 | 105 | 0 |
| 1992 | 122 | 0 |
| 1993 | 128 | 0 |
| 1994 | 149 | 0 |
| 1995 | 187 | 0 |
| 1996 | 136 | 0 |
| 1997 | 155 | 0 |
| 1998 | 226 | 0 |
| 1999 | 249 | 0 |
| 2000 | 296 | 0 |
| 2001 | 411 | 180 |
| 2002 | 393 | 387 |
| 2003 | 397 | 382 |
| 2004 | 426 | 497 |
| 2005 | 327 | 446 |
| 2006 | 319 | 398 |
| 2007 | 263 | 316 |
| 2008 | 241 | 274 |
| 2009 | 236 | 224 |
| 2010 | 250 | 214 |
| 2011 | 192 | 240 |
| 2012 | 207 | 343 |
| 2013 | 270 | 285 |
| 2014 | 295 | 259 |
| 2015 | 278 | 327 |
| 2016 | 306 | 267 |
| 2017 | 268 | 204 |
| 2018 | 220 | 267 |
| 2019 | 295 | 353 |
| 2020 | 343 | 479 |
| 2021 | 399 | 549 |
| 2022 | 457 | 871 |
| 2023 | 522 | 1144 |
| 2024 | 643 | 1005 |
| 2025 | 766 | 1075 |
| 2026 | 606 | 1026 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 12/31Having a storage electrode stacked over the transistor5,495
- H10B 12/48Data lines or contacts therefor5,015
- H10B 12/34The transistor being at least partially in a trench in the substrate1,755
- H10B 12/37The capacitor being at least partially in a trench in the substrate1,016
- H10B 12/36The transistor being a finfet608
- H10B 12/39The capacitor and the transistor being in a same trench421
- H10B 12/33The capacitor extending under the transistor278
Recent patents
- Memory device with container-shaped electrode and method for fabricating the same6 Oct 2026US 12,757,372 B2Nanya Technology Corporation
- Method for fabricating memory device with container-shaped electrode6 Oct 2026US 12,757,373 B2Nanya Technology Corporation
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Semiconductor memory device6 Oct 2026US 12,757,378 B2Samsung Electronics Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Method for manufacturing semiconductor memory device including a bit line mask pattern8 Oct 2026US 2026/0313871 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
- Semiconductor device and manufacturing method therefor, and electronic device8 Oct 2026US 2026/0313874 A1Beijing Superstring Academy of Memory Technology
- Microelectronic devices and related memory devices8 Oct 2026US 2026/0313875 A1Micron Technology, Inc.
Most cited
By later US patents
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films474US 9,691,771 B2L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude · 2017
- Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell465US 5,554,557 AVanguard International Semiconductor Corporation · 1996
- Memory cell arrays447US 7,045,834 B2Micron Technology, Inc. · 2006