H10B 12/33
The capacitor extending under the transistor
Official title: {the capacitor extending under the transistor}
H10B12/33 (The capacitor extending under the transistor) appears on 278 US grants and 475 published applications in this corpus.
Search patents in H10B- Granted patents
- 278
- Published applications
- 475
- Assignees
- 55
- Inventors
- 677
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 6 | 0 |
| 1998 | 3 | 0 |
| 1999 | 6 | 0 |
| 2000 | 5 | 0 |
| 2001 | 9 | 2 |
| 2002 | 9 | 11 |
| 2003 | 8 | 6 |
| 2004 | 7 | 5 |
| 2005 | 2 | 1 |
| 2006 | 3 | 4 |
| 2007 | 3 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 2 |
| 2010 | 1 | 3 |
| 2011 | 2 | 3 |
| 2012 | 1 | 5 |
| 2013 | 3 | 1 |
| 2014 | 7 | 5 |
| 2015 | 7 | 8 |
| 2016 | 5 | 5 |
| 2017 | 8 | 5 |
| 2018 | 4 | 4 |
| 2019 | 3 | 3 |
| 2020 | 4 | 9 |
| 2021 | 11 | 17 |
| 2022 | 17 | 56 |
| 2023 | 22 | 62 |
| 2024 | 37 | 56 |
| 2025 | 38 | 84 |
| 2026 | 32 | 117 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory circuitry and methods used in forming memory circuitry6 Oct 2026US 12,757,382 B2Micron Technology, Inc.
- Semiconductor memory device6 Oct 2026US 12,757,413 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing semiconductor device22 Sep 2026US 12,745,384 B2Kioxia Corporation
- Memory device and method of forming the same15 Sep 2026US 12,740,047 B2Nanya Technology Corporation
- Memory devices having vertical transistors and fabricating methods thereof15 Sep 2026US 12,740,051 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, memory device, and method for manufacturing semiconductor device8 Oct 2026US 2026/0313879 A1Semiconductor Energy Laboratory Co.Ltd.
- Defect free low temperature junction formation for 4f2 dram8 Oct 2026US 2026/0313935 A1APPLIED Materials.Inc.
- Semiconductor device including channel layer8 Oct 2026US 2026/0313960 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Body contacted dynamic memory212US 6,111,778 AInternational Business Machines Corporation · 2000
- Semiconductor memory device212US 6,617,651 B2Kabushiki Kaisha Toshiba · 2003
- Semiconductor memory device and method for fabricating the same165US 6,320,227 B1Hyundai Electronics Industries Co., Ltd. · 2001
- Method for fabricating a high-density semiconductor memory device149US 6,297,090 B1Samsung Electronics Co., Ltd. · 2001
- Method for making a dynamic random access memory using silicon-on-insulator techniques146US 5,631,186 ASamsung Electronics Co., Ltd. · 1997