Semiconductor device and method for manufacturing semiconductor device
AssigneeKioxia Corporation
InventorYasuyuki Sonoda
Life of this patent
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Abstract
A semiconductor device includes: a first conductor; a second conductor; an oxide semiconductor layer provided between the first conductor and the second conductor and extending in a first direction; a first wiring extending in a second direction across the first direction and surrounding the oxide semiconductor layer; an insulating film provided between the first wiring and the oxide semiconductor layer; a second wiring provided on the second conductor and extending in a third direction across each of the first direction and the second direction; a first insulating layer provided on a side surface of the second wiring and having a first void; and a second insulating layer provided on the first insulating layer and having a second void.
Claims18
A semiconductor device comprising:
- a first conductor;
- a second conductor;
- an oxide semiconductor layer provided between the first conductor and the second conductor and extending in a first direction;
- a first wiring extending in a second direction across the first direction and surrounding the oxide semiconductor layer;
- an insulating film provided between the first wiring and the oxide semiconductor layer;
- a second wiring provided on the second conductor and extending in a third direction across each of the first and second directions;
- a first insulating layer provided on a side surface of the second wiring and having a first void;
- and
- a second insulating layer provided on the first insulating layer and having a second void,
- wherein the oxide semiconductor layer has two ends in the first direction,
- one end of the oxide semiconductor is directly connected to the first conductor, and
- another end of the oxide semiconductor is directly connected to the second conductor.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first conductor, a second conductor, an oxide semiconductor layer, a first wiring, an insulating film, a second wiring, and a first insulating layer, the oxide semiconductor layer being provided between the first conductor and the second conductor and extending in a first direction, the first wiring surrounding the oxide semiconductor layer, the insulating film provided between the first wiring and the oxide semiconductor layer, the second wiring being provided on the second conductor, and the first insulating layer being provided on a side surface of the second wiring and having a first void;
- forming a lower insulating layer above the first insulating layer;
- partially removing the lower insulating layer to form a depression;
- forming an upper insulating layer on the lower insulating layer and thus covering the depression to form a second void between the lower insulating layer and the upper insulating layer;
- and
- performing a heat treatment under an atmosphere containing oxygen after forming the second void,
- wherein the oxide semiconductor layer has two ends in the first direction,
- one end of the oxide semiconductor is directly connected to the first conductor, and
- another end of the oxide semiconductor is directly connected to the second conductor.
Dependencies are inferred from the claim text.