Memory device and method of forming the same
AssigneeNanya Technology Corporation
InventorWei Yu Chen
Life of this patent
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Abstract
A method of forming a memory device includes forming a trench in a dielectric structure. The method further includes forming a conductive layer in the trench of the dielectric structure. The method further includes forming a first nitride spacer lining the trench. The method further includes etching the first nitride spacer to expose the conductive layer. The method further includes forming a second nitride spacer lining the first nitride spacer and the conductive layer. The method further includes forming a metal layer in the trench and over the conductive layer.
Claims20
A method of forming a memory device, comprising:
- forming a trench in a dielectric structure;
- forming a conductive layer in the trench of the dielectric structure;
- forming a first nitride spacer lining the trench;
- etching the first nitride spacer to expose the conductive layer;
- forming a second nitride spacer lining the first nitride spacer and the conductive layer;
- and
- forming a metal layer in the trench and over the conductive layer.
A memory device, comprising:
- a dielectric structure;
- a conductive layer in the dielectric structure;
- a dielectric nitride layer lining a sidewall of the dielectric structure;
- a conductive nitride layer extending from an inner sidewall of the dielectric nitride layer to a top surface of the conductive layer;
- and
- a metal layer over the conductive nitride layer.
Dependencies are inferred from the claim text.