H10B 12/31
Having a storage electrode stacked over the transistor
Official title: {having a storage electrode stacked over the transistor}
H10B12/31 (Having a storage electrode stacked over the transistor) appears on 5,495 US grants and 5,959 published applications in this corpus.
Search patents in H10B- Granted patents
- 5,495
- Published applications
- 5,959
- Assignees
- 312
- Inventors
- 5,995
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 19 | 0 |
| 1991 | 34 | 0 |
| 1992 | 61 | 0 |
| 1993 | 71 | 0 |
| 1994 | 92 | 0 |
| 1995 | 124 | 0 |
| 1996 | 88 | 0 |
| 1997 | 105 | 0 |
| 1998 | 162 | 0 |
| 1999 | 167 | 0 |
| 2000 | 166 | 0 |
| 2001 | 206 | 90 |
| 2002 | 201 | 200 |
| 2003 | 195 | 200 |
| 2004 | 215 | 246 |
| 2005 | 149 | 218 |
| 2006 | 152 | 202 |
| 2007 | 144 | 120 |
| 2008 | 105 | 103 |
| 2009 | 98 | 69 |
| 2010 | 104 | 89 |
| 2011 | 65 | 83 |
| 2012 | 72 | 105 |
| 2013 | 72 | 80 |
| 2014 | 81 | 74 |
| 2015 | 98 | 137 |
| 2016 | 128 | 123 |
| 2017 | 111 | 92 |
| 2018 | 112 | 139 |
| 2019 | 140 | 178 |
| 2020 | 181 | 254 |
| 2021 | 216 | 300 |
| 2022 | 253 | 421 |
| 2023 | 283 | 602 |
| 2024 | 291 | 590 |
| 2025 | 386 | 688 |
| 2026 | 332 | 556 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device with container-shaped electrode and method for fabricating the same6 Oct 2026US 12,757,372 B2Nanya Technology Corporation
- Method for fabricating memory device with container-shaped electrode6 Oct 2026US 12,757,373 B2Nanya Technology Corporation
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Semiconductor memory device6 Oct 2026US 12,757,378 B2Samsung Electronics Co., Ltd.
- Capacitor structure and semiconductor device including the same8 Oct 2026US 2026/0313876 A1Samsung Electronics Co., Ltd.
- Semiconductor device with low-k spacer8 Oct 2026US 2026/0313877 A1SK hynix Inc.
- Semiconductor device and method of fabricating the same8 Oct 2026US 2026/0313885 A1Samsung Electronics Co., Ltd.
- Semiconductor device including channel layer8 Oct 2026US 2026/0313960 A1Samsung Electronics Co., Ltd.
- Semiconductor device including conductive layers and cell capacitor8 Oct 2026US 2026/0313961 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell465US 5,554,557 AVanguard International Semiconductor Corporation · 1996
- Memory cell arrays447US 7,045,834 B2Micron Technology, Inc. · 2006
- Metal silicide texturizing technique430US 5,182,232 AMicron Technology, Inc. · 1993
- Method to form a capacitor having multiple pillars for advanced DRAMS399US 5,650,351 AVanguard International Semiconductor Corporation · 1997