H10B 12/318
The storage electrode having multiple segments
Official title: {the storage electrode having multiple segments}
H10B12/318 (The storage electrode having multiple segments) appears on 1,191 US grants and 658 published applications in this corpus.
Search patents in H10B- Granted patents
- 1,191
- Published applications
- 658
- Assignees
- 131
- Inventors
- 1,409
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 15 | 0 |
| 1992 | 33 | 0 |
| 1993 | 37 | 0 |
| 1994 | 40 | 0 |
| 1995 | 58 | 0 |
| 1996 | 58 | 0 |
| 1997 | 65 | 0 |
| 1998 | 114 | 0 |
| 1999 | 96 | 0 |
| 2000 | 66 | 0 |
| 2001 | 39 | 10 |
| 2002 | 20 | 20 |
| 2003 | 31 | 25 |
| 2004 | 45 | 71 |
| 2005 | 31 | 62 |
| 2006 | 37 | 87 |
| 2007 | 42 | 43 |
| 2008 | 46 | 32 |
| 2009 | 34 | 30 |
| 2010 | 43 | 35 |
| 2011 | 20 | 24 |
| 2012 | 29 | 31 |
| 2013 | 24 | 18 |
| 2014 | 19 | 9 |
| 2015 | 16 | 18 |
| 2016 | 17 | 16 |
| 2017 | 16 | 8 |
| 2018 | 8 | 14 |
| 2019 | 21 | 26 |
| 2020 | 19 | 17 |
| 2021 | 11 | 12 |
| 2022 | 15 | 8 |
| 2023 | 6 | 15 |
| 2024 | 2 | 2 |
| 2025 | 9 | 7 |
| 2026 | 6 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Capacitor and semiconductor device including the capacitor16 Jun 2026US 12,660,214 B2Samsung Electronics Co., Ltd.
- Dynamic random access memory14 Apr 2026US 12,604,461 B2Nanya Technology Corporation
- Arrays of capacitors, methods used in forming integrated circuitry, and methods used in forming an array of capacitors3 Mar 2026US 12,568,612 B2
- Semiconductor device17 Feb 2026US 12,557,268 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of fabricating the same13 Jan 2026US 12,526,980 B2Samsung Electronics Co., Ltd.
- Apparatus including cell contact and redistribution layer structure1 Oct 2026US 2026/0305313 A1Micron Technology, Inc.
- Semiconductor device with interface layer and method for fabricating the same27 Aug 2026US 2026/0255577 A1Nanya Technology Corporation
- Semiconductor device with interface layer and method for fabricating the same27 Aug 2026US 2026/0255619 A1Nanya Technology Corporation
- Method for fabricating semiconductor device with interface layer27 Aug 2026US 2026/0255620 A1Nanya Technology Corporation
- Method for forming semiconductor structure and semiconductor structure13 Aug 2026US 2026/0239636 A1CXMT Corporation
Most cited
By later US patents
- Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell465US 5,554,557 AVanguard International Semiconductor Corporation · 1996
- Method to form a capacitor having multiple pillars for advanced DRAMS399US 5,650,351 AVanguard International Semiconductor Corporation · 1997
- Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts248US 5,292,677 AMicron Technology, Inc. · 1994
- Dynamic random access memory array having a cross-point layout, tungsten digit lines buried in the substrate, and vertical access transistors235US 5,497,017 AMicron Technology, Inc. · 1996
- Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon207US 5,340,765 AMicron Semiconductor, Inc. · 1994