Semiconductor device

A semiconductor device, comprising:

• a lower electrode structure including a pillar portion and a cylinder portion on the pillar portion and extending from the pillar portion;
• a dielectric layer on the lower electrode structure;
• and
• an upper electrode structure on the dielectric layer,
• wherein the pillar portion includes a first lower electrode layer and a second lower electrode layer on the first lower electrode layer, and
• wherein a portion of the dielectric layer extends away from the upper electrode structure through the cylinder portion of the lower electrode structure into the pillar portion of the lower electrode structure;
• wherein the upper electrode structure comprises a first upper electrode structure and a second upper electrode structure, wherein a portion of the second upper electrode structure that does not vertically overlap the lower electrode structures extends vertically to the pillar portion of the lower electrode structures and a portion of the second upper electrode structure that vertically overlaps the lower electrode structures does not extend to the pillar portion in a vertical direction.

A semiconductor device, comprising:

• a substrate;
• storage node contacts on the substrate;
• and
• capacitors respectively on the storage node contacts,
• wherein:
• each of the capacitors includes:
• lower electrode structures including a pillar portion in contact with each of the storage node contacts and a cylinder portion on the pillar portion;
• a dielectric layer on the lower electrode structures;
• and
• an upper electrode structure on the dielectric layer, and
• wherein the pillar portion includes a first lower electrode layer having a cylindrical shape and a second lower electrode layer covering an inner wall of the first lower electrode layer, and
• wherein a portion of the dielectric layer extends away from the upper electrode structure through the cylinder portion into the second lower electrode layer of the pillar portion;
• wherein the upper electrode structure comprises a first upper electrode structure and a second upper electrode structure, wherein a portion of the second upper electrode structure that does not vertically overlap the lower electrode structures extends towards the substrate between the pillar portion of the adjacent lower electrode structures is centered between the pillar portion of the adjacent lower electrode structures.