Semiconductor device with interface layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorsCHUN-LIN LU, JYUN-HUA YANG
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capacitor structure including a bottom electrode layer positioned above the substrate, a treated interface layer positioned on the bottom electrode layer, a capacitor bottom dielectric layer positioned on the treated interface layer, a capacitor top dielectric layer positioned on the capacitor bottom dielectric layer, and a top electrode layer positioned on the capacitor top dielectric layer. The treated interface layer includes titanium oxide nitride.
Claims11
A semiconductor device, comprising:
- a substrate;
- and
- a capacitor structure, comprising:
- a bottom electrode layer positioned above the substrate;
- an interface layer positioned on the bottom electrode layer;
- a capacitor bottom dielectric layer positioned on the interface layer;
- a capacitor top dielectric layer positioned on the capacitor bottom dielectric layer;
- and
- a top electrode layer positioned on the capacitor top dielectric layer;
- wherein the interface layer comprises titanium oxide.
Dependencies are inferred from the claim text.