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US 12,660,214 B2Granted
Capacitor and semiconductor device including the capacitor
AssigneeSamsung Electronics Co., Ltd.
InventorsByunghoon Na, Jooho Lee
Life of this patent
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Abstract
Provided are a capacitor and a semiconductor device including the same. The capacitor includes: a dielectric layer having a perovskite crystal structure; and first and second electrodes spaced apart from each other with the dielectric layer therebetween. At least one of the first and second electrodes includes a metallic layer having a perovskite crystal structure, a first ionic layer having ionic properties, and a semiconductor layer.
Claims26
A capacitor comprising:
- a first electrode;
- a second electrode spaced apart from the first electrode;
- and
- a dielectric layer having a perovskite crystal structure, the dielectric layer between the first electrode and the second electrode,
- wherein at least one of the first electrode and the second electrode comprises
- a metallic layer having a perovskite crystal structure,
- a first ionic layer, the first ionic layer having an unbalanced charge such that the first ionic layer, as a whole, has ionic properties, and
- a semiconductor layer having a perovskite crystal structure, and
- wherein the metallic layer, the first ionic layer, and the semiconductor layer are sequentially arranged in a direction away from the dielectric layer.
6 more elements
Dependencies are inferred from the claim text.