H10B 12/315
With the capacitor higher than a bit line
Official title: {with the capacitor higher than a bit line}
H10B12/315 (With the capacitor higher than a bit line) appears on 2,908 US grants and 4,318 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,908
- Published applications
- 4,318
- Assignees
- 187
- Inventors
- 4,225
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 16 | 0 |
| 2000 | 35 | 0 |
| 2001 | 100 | 51 |
| 2002 | 107 | 119 |
| 2003 | 97 | 113 |
| 2004 | 116 | 123 |
| 2005 | 83 | 119 |
| 2006 | 82 | 73 |
| 2007 | 78 | 59 |
| 2008 | 44 | 48 |
| 2009 | 46 | 31 |
| 2010 | 40 | 39 |
| 2011 | 29 | 43 |
| 2012 | 34 | 55 |
| 2013 | 32 | 41 |
| 2014 | 42 | 48 |
| 2015 | 64 | 106 |
| 2016 | 96 | 98 |
| 2017 | 84 | 67 |
| 2018 | 77 | 110 |
| 2019 | 109 | 138 |
| 2020 | 135 | 179 |
| 2021 | 155 | 212 |
| 2022 | 174 | 312 |
| 2023 | 219 | 499 |
| 2024 | 207 | 515 |
| 2025 | 321 | 623 |
| 2026 | 285 | 497 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor memory device6 Oct 2026US 12,757,378 B2Samsung Electronics Co., Ltd.
- Semiconductor memory device with vertical channel transistors including multiple word lines6 Oct 2026US 12,757,379 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Memory device having improved P-N junction and manufacturing method thereof6 Oct 2026US 12,757,380 B2Nanya Technology Corporation
- Capacitor structure and semiconductor device including the same8 Oct 2026US 2026/0313876 A1Samsung Electronics Co., Ltd.
- Semiconductor device with low-k spacer8 Oct 2026US 2026/0313877 A1SK hynix Inc.
- Semiconductor device and method of fabricating the same8 Oct 2026US 2026/0313885 A1Samsung Electronics Co., Ltd.
- Semiconductor device including channel layer8 Oct 2026US 2026/0313960 A1Samsung Electronics Co., Ltd.
- Semiconductor device including conductive layers and cell capacitor8 Oct 2026US 2026/0313961 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Vertical memory device structures365US 7,378,702 B22008
- Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate228US 8,354,308 B2Samsung Electronics Co., Ltd. · 2013
- Vertical transistors183US 7,285,812 B2Micron Technology, Inc. · 2007
- Method for simultaneously fabricating a DRAM capacitor and metal interconnections177US 6,071,789 AVanguard International Semiconductor Corporation · 2000
- SOI device and method of fabrication148US 6,441,436 B1United Microelectronics Corp. · 2002